DMT10H025LK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I 100% Unclamped Inductive Switching Ensures More Reliable D BV R Max DSS DS(ON) T = +25C C and Robust End Application Low R Minimizes Power Losses DS(ON) 47.2A 22m VGS = 10V Low Q Minimizes Switching Losses G Lead-Free Finish RoHS Compliant (Notes 1 & 2) 100V 30m V = 6.0V 40.4A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 43.7m V = 4.5V 33.5A GS Description Mechanical Data Case: TO252 (DPAK) This new generation MOSFET features low on-resistance and fast Case Material: Molded Plastic, Green Molding Compound. switching, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.33 grams (Approximate) Backlighting Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT10H025LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT10H025LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 47.2 C A Continuous Drain Current, V = 10V I GS D 37.7 T = +70C C 185 A Pulsed Drain Current (10s Pulse, T = +25C, Package Limited) I C DM 185 A Pulsed Body Diode Forward Current (10s Pulse, T = +25C, Package Limited) I C SM Maximum Continuous Body Diode Forward Current (Note 6) 2.6 A I S Avalanche Current, L = 0.1mH I 15.8 A AS Avalanche Energy, L = 0.1mH E 12.5 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.6 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 48 C/W R JA Total Power Dissipation (Note 6) 83 W P D Thermal Resistance, Junction to Case (Note 6) R 1.5 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 17.1 22 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R 21.4 30 m V = 6V, I = 20A DS(ON) GS D 28.3 43.7 V = 4.5V, I = 20A GS D Diode Forward Voltage V 1.3 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1477 iss V = 50V, V = 0V DS GS 263 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance C 20 rss Gate Resistance 1.3 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 21 Q G V = 50V, I = 20A, DD D Gate-Source Charge 5.7 nC Q GS V = 10V GS Gate-Drain Charge 3.8 Q GD Turn-On Delay Time 6.3 t D(ON) Turn-On Rise Time t 9.4 V = 50V, V = 10V, R DD GS ns 16.7 Turn-Off Delay Time t I = 20A, R = 6 D(OFF) D G Turn-Off Fall Time t 8.2 F 38.7 Reverse Recovery Time t ns RR I = 20A, di/dt = 100A/s F Reverse Recovery Charge Q 53.7 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H025LK3 July 2018 Diodes Incorporated www.diodes.com Document number: DS40039 Rev. 3 - 2