DMN24H11DSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I D BV R DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 11 V = 10V 0.27A GS Small Surface Mount Package 240V 12 V = 4.5V 0.26A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Mechanical Data PPAP and is ideal for use in: Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification DC-DC Converters Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Battery Operated Systems and Solid-State Relays Terminals: Lead Free Plating (Matte Tin Finish Annealed over Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Alloy 42 Leadframe). Solderable per MIL-STD-202, Method Memories, Transistors, etc e3 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D DD G GG SS S Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN24H11DSQ-7 SOT23 3,000/Tape & Reel DMN24H11DSQ-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN24H11DSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 240 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 0.27 A Continuous Drain Current (Note 7) V = 10V I A GS D State 0.22 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle 1%) 0.8 A IDM Maximum Body Diode Continuous Current (Note 6) I 0.8 A S Peak Diode Recovery dv/dt dv/dt 6.0 V/ns Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 0.75 Total Power Dissipation P W D (Note 7) 1.2 (Note 6) 166 Thermal Resistance, Junction to Ambient R JA (Note 7) 104 C/W Thermal Resistance, Junction to Case (Note 7) 35 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 240 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 100 nA I V = 240V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.0 2.0 3.0 V V V = V , I = 250A GS(TH) DS GS D 3.7 11 V = 10V, I = 0.3A GS D Static Drain-Source On-Resistance R DS(ON) 4.0 12 V = 4.5V, I = 0.2A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 0.1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 76.8 iss V = 25V, V = 0V, DS GS Output Capacitance C 6.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 4.1 rss Gate Resistance R 17 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge 3.7 Q g V = 192V, V = 10V, DS GS Gate-Source Charge 0.3 nC Q gs I = 0.1A D Gate-Drain Charge 2.1 Q gd Turn-On Delay Time t 4.8 D(ON) Turn-On Rise Time t 4.7 R V = 120V, I = 0.1A, DS D ns V = 10V, R = 6.0 Turn-Off Delay Time t 17.5 GS G D(OFF) Turn-Off Fall Time t 102.3 F Reverse Recovery Time t 45.6 ns RR V = 100V, I = 1.0A, R F di/dt = 100A/s Reverse Recovery Charge Q 51.6 nC RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN24H11DSQ August 2017 Diodes Incorporated www.diodes.com Document number: DS40035 Rev. 1 - 2 ADVANCED INFORMATION