X-On Electronics has gained recognition as a prominent supplier of PSMN8R7-100YSFX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN8R7-100YSFX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN8R7-100YSFX Nexperia

PSMN8R7-100YSFX electronic component of Nexperia
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Part No.PSMN8R7-100YSFX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PSMN8R7-100YSF SOT669LFPAK
Datasheet: PSMN8R7-100YSFX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
95: USD 1.6478 ea
Line Total: USD 156.54 
Availability - 2716
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 95  Multiples: 1
Pack Size: 1
Availability Price Quantity
2716
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 95
Multiples : 1
95 : USD 1.6478
250 : USD 1.5957
500 : USD 1.5717

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN8R7-100YSFX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN8R7-100YSFX and other electronic components in the MOSFETs category and beyond.

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PSMN8R7-100YSF NextPower 100 V, 9 m N-channel MOSFET in LFPAK56 package 1 November 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Q for higher efficiency and lower spiking rr Qualified to 175 C Low Q x R FOM for high efficiency switching applications G DSon Strong avalanche energy rating (E ) as Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK56 package Wave-solderable LFPAK56 package 3. Applications Synchronous rectifier in AC-DC and DC-DC BLDC motor control USB-PD and mobile fast-charge adapters LED lighting Full-bridge and half-bridge applications Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 100 V DS j I drain current V = 10 V T = 25 C Fig. 2 - - 90 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 198 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 7.2 9 m DSon GS D j resistance Fig. 10 V = 10 V I = 25 A T = 100 C - 10.7 14 m GS D j Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 50 V V = 10 V - 7.5 - nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 38.5 - nC G(tot)Nexperia PSMN8R7-100YSF NextPower 100 V, 9 m N-channel MOSFET in LFPAK56 package Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- I = 30.3 A V 100 V R = 50 1 - - 234 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C Fig. 4 GS j(init) energy Unclamped Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V - 52.6 - nC r S S GS V = 50 V Fig. 16 DS 1 Protected by 100% test 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D mb 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R7-100YSF LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN8R7-100YSF 8F7S10 PSMN8R7-100YSF All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 November 2017 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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