MOSFET - Power, Single N-Channel 80 V, 14.5 m , 48 A NVTFS6H854N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D NVTFS6H854NWF Wettable Flanks Product AECQ101 Qualified and PPAP Capable 80 V 48 A 14.5 m 10 V These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) NChannel J Parameter Symbol Value Unit D (5 8) DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 44 C D G (4) Current R JC T = 100C 31 (Notes 1, 2, 3, 4) C Steady State S (1, 2, 3) Power Dissipation T = 25C P 68 W C D R (Notes 1, 2, 3) JC T = 100C 34 C MARKING DIAGRAM Continuous Drain T = 25C I 9.5 A A D Current R JA 1 T = 100C 6.7 (Notes 1, 3, 4) A 1 Steady S D State XXXX WDFN8 S D Power Dissipation P W T = 25C 3.2 A D AYWW ( 8FL) S D R (Notes 1, 3) JA T = 100C 1.6 A CASE 511AB G D Pulsed Drain Current T = 25C, t = 10 s I 175 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg XXXX = Specific Device Code Range +175 A = Assembly Location Y = Year Source Current (Body Diode) I 57 A S WW = Work Week Single Pulse DraintoSource Avalanche E 205 mJ = PbFree Package AS Energy (I = 2.2 A) L(pk) (Note: Microdot may be in either location) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information in the assumed, damage may occur and reliability may be affected. package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 2.2 C/W JC JunctiontoAmbient Steady State (Note 3) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2020 Rev. 1 NVTFS6H854N/DNVTFS6H854N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 80 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 45 A 2.0 4.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 10 A 11.9 14.5 m DS(on) GS D Forward Transconductance g V = 15 V, I = 15 A 39.5 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 770 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 113 oss V = 40 V DS Reverse Transfer Capacitance C 5.4 rss Threshold Gate Charge Q 2.7 nC G(TH) GatetoSource Charge Q 4.3 GS V = 10 V, V = 40 V, I = 15 A GS DS D GatetoDrain Charge Q 2.3 GD Total Gate Charge Q V = 10 V, V = 40 V, I = 15 A 13 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 22 r V = 6.0 V, V = 64 V, GS DS I = 15 A D TurnOff Delay Time t 24 d(off) Fall Time t 6.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.7 J Reverse Recovery Time t 33 ns RR Charge Time t 22 a V = 0 V, dl /dt = 100 A/ s, GS S I = 15 A S Discharge Time t 11 b Reverse Recovery Charge Q 29 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2