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X-On Electronics has gained recognition as a prominent supplier of DMN61D9UWQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN61D9UWQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN61D9UWQ-7 Diodes Incorporated

DMN61D9UWQ-7 electronic component of Diodes Incorporated
DMN61D9UWQ-7 Diodes Incorporated
DMN61D9UWQ-7 MOSFETs
DMN61D9UWQ-7  Semiconductors

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See Product Specifications
Part No. DMN61D9UWQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60V
Datasheet: DMN61D9UWQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.297 ea
Line Total: USD 0.3 
Availability - 3611
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1910
Ship by Wed. 22 Jan to Mon. 27 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1401
50 : USD 0.1144
150 : USD 0.1015
500 : USD 0.0918
3000 : USD 0.0802
6000 : USD 0.0764

3611
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.1903
100 : USD 0.0836
1000 : USD 0.0748
3000 : USD 0.0572
9000 : USD 0.0517

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMN61D9UWQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN61D9UWQ-7 and other electronic components in the MOSFETs category and beyond.

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DMN61D9UWQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max D Low On-Resistance BV R max DSS DS(ON) T = +25C A Low Input Capacitance 340mA 2 V = 5.0V GS 60V Fast Switching Speed 2.5 V = 2.5V 300mA GS Low Input/Output Leakage ESD Protected Up To 2kV Description and Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability resistance (R ) and yet maintain superior switching performance, DS(ON) PPAP Capable (Note 4) making it ideal for high efficiency power management applications: Mechanical Data Motor Control Power Management Functions Case: SOT323 Backlighting Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D SOT323 D G Gate Protection G S S Diode ESD protected up to 2kV Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN61D9UWQ-7 SOT323 3,000/Tape & Reel DMN61D9UWQ-13 SOT323 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN61D9UWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 340 A mA I D State 270 T = +70C A Continuous Drain Current (Note 7) V = 5.0V GS T = +25C 400 A t<5s I mA D 300 T = +70C A Maximum Continuous Body Diode Forward Current (Note 7) I 0.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 7) I 1.2 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 320 mW P D Steady State 393 Thermal Resistance, Junction to Ambient (Note 6) C/W RJA t<5s 306 Total Power Dissipation (Note 7) P 440 mW D Steady State 289 Thermal Resistance, Junction to Ambient (Note 7) R C/W JA t<5s 235 Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A IDSS VDS = 60V, VGS = 0V Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.0 V V V = 10V, I = 250A GS(TH) DS D V = 5.0V, I = 0.05A 1.2 2.0 GS D Static Drain-Source On-Resistance 1.6 2.5 R V = 2.5V, I = 0.05A DS(ON) GS D 2.5 3.5 V = 1.8V, I = 0.05A GS D Forward Transconductance Y 200 mS V =10V, I = 0.2A fs DS D Diode Forward Voltage V 0.75 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 28.5 pF iss V = 30V, V = 0V DS GS Output Capacitance C 3.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.5 pF rss Gate Resistance R 65 f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge 0.4 nC Q g VGS = 4.5V, VDS = 10V, Gate-Source Charge 0.1 nC Q gs I = 250mA D Gate-Drain Charge 0.1 nC Q gd Turn-On Delay Time 2.1 ns t D(ON) Turn-On Rise Time t 1.8 ns V = 30V, V = 10V, R DD GS Turn-Off Delay Time t 14.4 ns R = 25, I = 200mA D(OFF) G D Turn-Off Fall Time t 8.4 ns F Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMN61D9UWQ April 2017 Diodes Incorporated www.diodes.com Document number: DS39554 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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