DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low R Ensures On State Losses Are Minimized DS(ON) I Max D BV R Max DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C C Density End Products 20m V = -10V GS Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m V = -5V GS Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance Mechanical Data (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: PowerDI 3333-8 (Type UX) Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 D S S S G G D D S D D Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP3036SFV-7 PowerDI3333-8 (Type UX) 2000/Tape & Reel DMP3036SFV-13 PowerDI3333-8 (Type UX) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3036SFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS T = +25C -8.7 A Continuous Drain Current, V = -10V (Note 6) I A GS D -7.0 T = +70C A -30 T = +25C C A Continuous Drain Current, V = -10V (Note 7) I GS D -25 T = +70C C Maximum Continuous Body Diode Forward Current (Note 7) I -3.6 A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I -80 A DM Avalanche Current, L = 0.3mH (Note 8) I -17.5 A AS Avalanche Energy, L = 0.3mH (Note 8) E 64 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.9 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 137 C/W JA Total Power Dissipation (Note 6) 2.3 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 55 JA C/W Thermal Resistance, Junction to Case (Note 7) 3.5 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1.0 -2.5 V V = V , I = -250A GS(TH) DS GS D 20 VGS = -10V, ID = -8A Static Drain-Source On-Resistance R m DS(ON) 29 V = -5V, I = -5A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 1931 C iss V = -15V, V = 0V DS GS Output Capacitance 226 pF C oss f = 1.0MHz 168 Reverse Transfer Capacitance C rss 11 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 8.8 Total Gate Charge (V = -5V) Q GS g 16.5 Total Gate Charge (V = -10V) Q GS g nC V = -15V, I = -10A DS D 2.6 Gate-Source Charge Q gs 3.6 Gate-Drain Charge Qgd Turn-On Delay Time 8.2 t D(ON) Turn-On Rise Time 14 t V = -15V, V = -10V, R DD GS ns Turn-Off Delay Time 65 t RGEN = 3, ID = -10A D(OFF) Turn-Off Fall Time 31.6 t F Reverse Recovery Time 9.3 ns t RR I = -8A, di/dt = 500A/s F 12.2 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3036SFV December 2017 Diodes Incorporated www.diodes.com Document number: DS39695 Rev. 3 - 2