NTR4502P, NVTR4502P MOSFET Power, Single, P-Channel, SOT-23 -30 V, -1.95 A Features www.onsemi.com Leading Planar Technology for Low Gate Charge/Fast Switching V R TYP I Max (Note 1) Low R for Low Conduction Losses (BR)DSS DS(on) D DS(ON) SOT23 Surface Mount for Small Footprint (3 x 3 mm) 155 m 10 V 30 V 1.95 A NV Prefix for Automotive and Other Applications Requiring Unique 240 m 4.5 V Site and Control Change Requirements AECQ101 Qualified and PPAP Capable PChannel MOSFET These Devices are PbFree and are RoHS Compliant S Applications DC to DC Conversion G Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Cameras, etc. Battery Charging Circuits D MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit MARKING DIAGRAM/ DraintoSource Voltage V 30 V PIN ASSIGNMENT DSS Drain GatetoSource Voltage V 20 V GS 3 Drain Current (Note 1) t < 10 s T = 25C I 1.95 A A D TR2 M T = 70C 1.56 A SOT23 CASE 318 2 1 Power Dissipation t < 10 s P 1.25 W D (Note 1) STYLE 21 Gate Source Continuous Drain Current Steady T = 25C I 1.13 A A D TR2 = Device Code (Note 1) State M = Date Code* T = 70C 0.90 A = PbFree Package Power Dissipation Steady State P 0.4 W D (Note 1) (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Pulsed Drain Current t = 10 s I 6.8 A p DM vary depending upon manufacturing location. Operating Junction and Storage Temperature T , 55 to C J T 150 STG ORDERING INFORMATION Source Current (Body Diode) I 1.25 A S Device Package Shipping Lead Temperature for Soldering Purposes T 260 C L (1/8 in from case for 10 s) NTR4502PT1G SOT23 3000 / Tape & Reel (PbFree) THERMAL RESISTANCE RATINGS NVTR4502PT1G SOT23 3000 / Tape & Reel Parameter Symbol Max Unit (PbFree) JunctiontoAmbient Steady State (Note 1) R 300 C/W JA For information on tape and reel specifications, JunctiontoAmbient t = 10 s (Note 1) R 100 including part orientation and tape sizes, please JA refer to our Tape and Reel Packaging Specifications Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. 1 oz including traces). Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: June, 2019 Rev. 6 NTR4502P/DNTR4502P, NVTR4502P Electrical Characteristics (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, V = 30 V T = 25C 1 A DSS GS DS J T = 55C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 1.95 A 155 200 m DS(on) GS D V = 4.5 V, I = 1.5 A 240 350 GS D Forward Transconductance g V = 10 V, I =1.25 A 3 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1 MHz, V = 15 V 200 pF ISS GS DS Output Capacitance C 80 OSS Reverse Transfer Capacitance C 50 RSS Total Gate Charge Q V = 10 V, V = 15 V I = 1.95 A 6 10 nC G(TOT) GS DS D Threshold Gate Charge Q 0.3 G(TH) GatetoSource Charge Q 1 GS GatetoDrain Charge Q 1.7 GD SWITCHING CHARACTERISTICS (Note 4) V =10 V, V = 15 V, ns TurnOn Delay Time t 5.2 10 d(ON) GS DD I = 1.95 A, R = 6 D G Rise Time t 12 20 r TurnOff Delay Time t 19 35 d(OFF) Fall Time t 17.5 30 f DRAINSOURCE DIODE CHARACTERISTICS (Note 3) Forward Diode Voltage V V = 0 V, I = 1.25 A 0.8 1.2 V SD GS S Reverse Recovery Time t V = 0 V, dI /d = 100 A/ s, I = 1.25 A 23 ns RR GS SD t S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. 1 oz including traces). 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2