X-On Electronics has gained recognition as a prominent supplier of NYC222STT1G SCRs across the USA, India, Europe, Australia, and various other global locations. NYC222STT1G SCRs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

NYC222STT1G ON Semiconductor

NYC222STT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NYC222STT1G
Manufacturer: ON Semiconductor
Category: SCRs
Description: SCRs SENSITIVE GATE SCR
Datasheet: NYC222STT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6138 ea
Line Total: USD 0.61 
Availability - 1992
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1992
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6138
10 : USD 0.5258
100 : USD 0.3707
500 : USD 0.2981
1000 : USD 0.2475
2000 : USD 0.2156
10000 : USD 0.2123
25000 : USD 0.2112
50000 : USD 0.2046

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NYC222STT1G from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NYC222STT1G and other electronic components in the SCRs category and beyond.

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Thyristors Surface Mount 400V 600V > NYC222, NYC226, NYC228 Pb NYC222, NYC226, NYC228 Description Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. Features Blocking Voltage to 600 V Low-Cost Surface Mount SOT223 Package High Surge Current 15 A These are PbFree Very Low Forward On Devices Voltage at High Current Pin Out Functional Diagram 4 MT 1 MT 2 G 3 1 2 Additional Information Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19Thyristors Surface Mount 400V 600V > NYC222, NYC226, NYC228 Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit NYC222 50 Peak Repetitive OffState Voltage (Note 1) NYC226 V , 400 V DRM (R = I , T 40 to +110C, Sine Wave, 50 to 60 Hz) GK K J NYC228 V 600 RRM On-State RMS Current (180 Conduction Angles T = 80C) I 1.5 A C T (RMS) Average OnState Current, (T = 65C, f = 60 Hz, Time = 1 sec) I 2.0 A C T (RMS) Peak Non-repetitive Surge Current, I 15 A TSM T = 25C, (1/2 Cycle, Sine Wave, 60 Hz) A 2 Circuit Fusing Considerations (t = 8.3 ms) I t 0.9 A2s Forward Peak Gate Power (Pulse Width 1.0 sec, T = 25C) P 0.5 W A GM Forward Average Gate Power (t = 8.3 msec, T = 25C) P 0.1 W A GM (AV) Forward Peak Gate Current (Pulse Width 1.0 s, T = 25C) I 0.2 A A FGM Reverse Peak Gate Voltage (Pulse Width 1.0 s, T = 25C) V 5.0 V A RGM Operating Junction Temperature Range Rated V and V T -40 to +110 C RRM DRM J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoAmbient PCB Mounted R 156 mW 8JA Thermal Resistance, JunctiontoTab Measured on MT2 Tab Adjacent R 25 C/W 8JT to Epoxy Maximum Device Temperature for Soldering Purposes for T 260 C L 10 Secs Maximum Electrical Characteristics - OFF (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit - - 1.0 A Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 110C I AK DRM RRM J RRM - - 200 mA Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 2) (I = 2.2 A Peak) V 1.2 1.7 V TM TM T = 25C 30 200 HGate Trigger Current (Note 3) C I A GT (V = 12 V, R = 100 , T = 25C) D L C T =40C 500 C T = 25C 0.8 Gate Trigger Voltage (dc) (Note 3) C V V GT (V = 7 Vdc, R = 100) AK L T =40C 1.2 C Gate NonTrigger Voltage T = 110C V 0.1 V C GD (V = V , R = 100 ) AK DRM L Holding Current T = 25C 2.0 5.0 C (V = 12 V, R = 1000 ) I V AK GK H T =40C 10 Initiating Current = 200 mA C 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19

Tariff Desc

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OOF
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