P0109AL Sensitive high immunity 0.25 A SCR Thyristor Datasheet - production data Description Thanks to highly sensitive triggering levels, the 0.25 A P0109AL SCR Thyristor is suitable for all applications where available gate current is limited. Its high immunity makes it ideal for high electric noise circuits. The surface mount SOT23-3L package allows compact SMD based designs for automated manufacturing. Table 1: Device summary Symbol Value Unit IT(RMS) 0.25 A V /V 100 V DRM RRM Features IGT 1 A IT(RMS) 0.25 A T max. 125 C j Low 1 A gate current High noise immunity 100 V/s ECOPACK 2 compliant component Applications Standby mode power supplies Smoke detectors DC 24/48 V proximity sensors Gate driver for large Thyristors Overvoltage crowbar protection Capacitive ignition circuit August 2017 DocID030704 Rev 2 1/8 www.st.com This is information on a product in full production. Characteristics P0109AL 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit RMS on-state current I 0.25 T(RMS) (180 conduction angle) T = 36 C A amb Average on-state current IT(AV) 0.16 (180 conduction angle) tp = 8.3 ms 7 Non repetitive surge peak on-state current I A TSM (Tj initial = 25 C t = 10 ms 6 p 2 2 2 I t I t value for fusing tp = 10 ms 0.18 A s Critical rate of rise of on-state current dl/dt f = 60 Hz Tj = 125 C 50 A/s I = 2 x I , t 100 ns G GT r VDRM/VRRM Repetitive peak off-state voltage Tj = 125 C 100 V I Peak gate current t = 20 s T = 125 C 0.5 A GM p j PG(AV) Average gate power dissipation Tj = 125 C 0.02 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature -40 to +125 C Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Symbol Test conditions Value Unit IGT Max. 1 A VD = 12 V, RL = 140 V Max. 0.8 V GT VGD VD = VDRM, RL = 3.3 k, RGK = 1000 Tj = 125 C Min. 0.1 V V I = 10 A Min. 8 V RG RG IH IT = 50 mA, RGK = 1000 Max. 6 mA I I = 1.2 x I , R = 1000 Max. 7 mA L G GT GK dV/dt VD = 67 % VDRM, RGK = 1000 Tj = 125 C Min. 100 V/s Table 4: Static characteristics Symbol Test conditions Value Unit V I = 0.4 A, t = 380 s T = 25 C Max. 1.7 TM TM p j V VTO Threshold voltage Tj = 125 C Max. 1 R Dynamic resistance T = 125 C Max. 1000 m D j Tj = 25 C 1 IDRM/IRRM VD = VDRM VR = VRRM, RGK = 1000 Max. A T = 125 C 100 j Table 5: Thermal parameters Symbol Parameter Value Unit R Junction to ambient (Mounted on FR4 with recommended pad layout) 400 C/W th(j-a) 2/8 DocID030704 Rev 2