TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices Qualified
Level
2N2323 2N2324 2N2326 2N2328
JAN
2N2323S 2N2324S 2N2326S 2N2328S 2N2329
JANTX
2N2323A 2N2324A 2N2326A 2N2328A 2N2329S
JANTXV
2N2323AS 2N2324AS 2N2326AS 2N2328AS
MAXIMUM RATINGS
2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/
Ratings Sym 2N2329,S Unit
2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S
V 50 100 200 300 400
RM
V 75 150 300 400 500
RM
V 50 100 200 300 400
I 0.22
O
Forward Current Surge Peak I 15
- Gate Current V 6
0
Operating Temperature T - 65 to +125 C
op
0
T - 65 to +150 C
0
1) This average forward current is for an ambient temperature of 80 C and 180 electrical degrees of
2) Surge current is non - recurrent. The rate of rise of peak surge current shall not exceed 40 A during
TO - 5
the first 5 s after switching from the off (blocking) to the on (conducting) state. This is measured
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3)
4) e through 2,000 ohm resistor.
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
SUBGROUP 2 TESTING
R = 1 k 2N2323 thru 2N2329
2
2N2323S thru 2N2329S
R = 2 k
2
10
I
V = 50 Vdc
R
V = 100 Vdc
R
V = 200 Vdc
R
V = 300 Vdc
R
V = 400 Vdc 2N2329, S,
R
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2N2328, S, A, AS
2N2326, S, A, AS
2N2324, S, A, AS
2N2323, S, A, AS
RBX1
Adc
2N2323AS thru 2N2328AS
2N2323A thru 2N2328A
Reverse Blocking Current
for package outline
*See appendix A
Gate connected to cathod
Gate connected to cathode through 1,000 ohm resistor.
conduction.
stg
mp Storage Junction Te
KGM
Vpk Cathode
FSM
Adc
(2)
Adc Average Forward Current
(1)
FBXM
Vpk d Blocking Voltage Forwar
(3) (3/4) (3/4) (3/4) (3/4)
Vpk Working Peak Reverse Voltage
Vdc Reverse Voltage
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (cont)
Characteristics Symbol Min. Max. Unit
R = 1 k 2N2323 thru 2N2329
2
2N2323S thru 2N2329S
R = 2 k
2
I 10
V = 50 Vdc
R
V = 100 Vdc
R
V = 200 Vdc
R
V = 300 Vdc
R
V = 400 Vdc 2N2329, S
R
Reverse Gate Current
I 200
V = 6 Vdc
Gate Trigger Voltage and Current
V = V = 100
2 L
R = 1 k 2N2323 thru 2N2329 and 0.80
e V 0.35
thru 2N2329S I 200
R = 2 k V 0.35 0.60
e
I 20
SUBGROUP 4 TESTING
0
Exponential Rate of Voltage Rise T = 125 C
A
50 R 400 , C = 0.1 to 1.0 F, repeti tion rate = 60 pps,
L
test duration = 15 seconds
dv/dt = 1.8 v/ s, R = 1 k 2N2323 thru 2N2329 and
3
2N2323S thru 2N2329S
dv/dt = 0.7 v/ s, R = 2 k
3
V
V = 50 Vdc 47
V = 100 V 95
V = 200 Vdc 190
V = 300 Vdc 285
V = 400 Vdc 2N2329, S 380
V 2.2 )
i = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
FM
V
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 s min., R = 330
2
I 2.0
R = 1 k 2N2323 thru 2N2329 and
3
2N2323S thru 2N2329S
R = 2 k
3
6 Lake Street, Lawrence, MA 01841 120101
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803
Page 2 of 2
2N2323AS thru 2N2328AS
2N2323A thru 2N2328A and
HOX
mAdc
F2 F1 AA
= 10 mAdc = 100 mAdc, I = 24 Vdc max, I
Holding Current
FM
V(pk
Forward on Voltage
AA
AA
2N2328, S, A, AS
AA
2N2326, S, A, AS
AA
2N2324, S, A, AS dc
AA
2N2323, S, A, AS
2N2323AS thru 2N2328AS
FBX
2N2323A thru 2N2328A and
Vdc
GT1
Adc 2N2323AS thru 2N2328AS
GT1
Vdc 2N2323A thru 2N2328A and
GT1
Adc 2N2323S
GT1
Vdc
FBX
= 6 Vdc; R
KG
KG
Adc
2N2328, S, A, AS
2N2326, S, A, AS
2N2324, S, A, AS
2N2323, S, A, AS
FBX1
Adc
2N2323AS thru 2N2328AS
2N2323A thru 2N2328A
Forward Blocking Current