NYE08-10B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92 package which is readily adaptable for use in automatic insertion equipment. NYE08 10B6TG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient PCB Mounted per Figure TBD R 156 C/W JA Thermal Resistance, JunctiontoTab Measured on OUT Tab Adjacent to Epoxy R 25 C/W JT Maximum Device Temperature for T 260 C L Soldering Purposes for 10 Secs Maximum ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T = 25C I , I 2.0 A J DRM RRM (V = Rated V /V Gate Open) T = +125C 200 A D DRM RRM J ON CHARACTERISTICS Peak OnState Voltage V 1.3 V TM (I = 1.1 A Peak Pulse Width 2.0 ms, Duty Cycle 2.0%) TM Gate Trigger Current (dc) I mA GT (V = 12 Vdc, R = 30 ) D L OUT(+), G() 0.15 10 OUT(), G() 0.15 10 Latching Current (V = 12 V, I = 1.2 x I ) I mA D G GT L OUT(+), G() All Types 30 OUT(), G() All Types 30 Gate Trigger Voltage (dc) (V = 12 Vdc, R = 30 ) V 1.0 V D L GT Gate NonTrigger Voltage (V = 12 V, R = 30 , T = 125C) V 0.15 V D L J GD Quadrants 2, 3 Dynamic Resistance R 300 m D Holding Current (V = 12 Vdc, Initiating Current = 50 mA, Gate Open) I 25 mA D H DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current di/dt(c) 0.3 A/ms (Commutating dv/dt = 15 V/ s, Gate Open, T = 125C, f = 250 Hz, J without Snubber) Critical Rate of Rise of OffState Voltage (V = 67% V , Exponential dv/dt V/ s D DRM Waveform, Gate Open, T = 125C) 500 J Clamping Voltage (I = 1.0 mA, t = 1 ms, T = 125C) V 650 V CL p J CL