BTA08, BTB08, T810 T835, T850 Datasheet Snubberless, logic level and standard 8 A Triacs A2 Features On-state rms current, I 8 A T(RMS) G Repetitive peak off-state voltage, V / V 600 V to 800 V DRM RRM A1 A2 Triggering gate current, I 5 to 50 mA GT Description G G Available either in through-hole and surface-mount packages, these devices are A2 A2 A1 A1 suitable for general purpose AC switching. They can be used as an ON/OFF function TO-220AB TO-220AB Ins. in applications such as static relays, heating regulation, induction motor starting A2 circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTA, BTB08 xxxxW and T8 series) are specially G A2 A1 recommended for use on inductive loads, thanks to their high commutation DPAK performance. A2 A2 Logic level versions are designed to interface directly with low power drivers such as Microcontrollers. G A2 A1 By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated G A2 IPAK DPAK at 2500 V ) in compliance with UL standards (file ref.: E81734). A1 RMS Product status link BTA08 BTB08 T810 T835 T850 DS2114 - Rev 15 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.BTA08, BTB08, T810, T835, T850 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit T = 110 C IPAK, DPAK,TO-220AB, DPAK c I RMS on-state current (full sine wave) 8 A T(RMS) T = 100 C TO-220AB Ins. c f = 50 Hz t = 20 ms 80 Non repetitive surge peak on-state current (full I A TSM cycle, T initial = 25 C) j t = 16.7 ms f = 60 Hz 84 p 2 2 2 t = 10 ms I t I t value for fusing 36 A s p Critical rate of rise of on-state current I = 2 x G T = 125 C dl/dt f = 120 Hz 50 A/s j I , tr 100 ns GT I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) Snubberless and logic level (3 j quadrants) T8 BTA08/BTB08 Symbol Parameter Quadrant Unit 10 35 50 TW SW CW BW (1) I I - II - III Max. 10 35 50 5 10 35 50 mA GT V = 12 V, R = 30 D L V I - II - III Max. 1.2 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA I - II - III Max. 15 35 75 10 15 35 50 mA T H I - III Max. 25 50 70 10 25 50 70 I I = 1.2 x I mA L G GT II Max. 30 60 110 15 30 60 80 (2) V = 67% V , gate open, T = 125 C Max. 40 400 1000 20 40 400 1000 V/s dV/dt D DRM j (dV/dt)c = 0.1 V/s, T = 125 C Min. 5.4 3.5 5.4 j (2) (dV/dt)c = 10 V/s, T = 125 C Min. 2.8 1.5 2.98 A/ms (dl/dt)c j Without snubber, T = 125 C Min. 4.5 7 4.5 7 j 1. Minimum I is guaranteed at 5 % of I max. GT GT 2. For both polarities of A2 referenced to A1 DS2114 - Rev 15 page 2/21