X-On Electronics has gained recognition as a prominent supplier of T830-800W Triacs across the USA, India, Europe, Australia, and various other global locations. T830-800W Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T830-800W STMicroelectronics

T830-800W electronic component of STMicroelectronics
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Part No.T830-800W
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triacs 8.0 Amp 800 Volt
Datasheet: T830-800W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 0.8522 ea
Line Total: USD 12.78 
Availability - 0
MOQ: 15  Multiples: 15
Pack Size: 15
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 2.4592

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 15
Multiples : 15
15 : USD 0.8522

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Package Case
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T830-800W from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T830-800W and other electronic components in the Triacs category and beyond.

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T820W T830W 8A SNUBBERLESS TRIAC A2 MAIN FEATURES Symbol Value Unit I 8A G T(RMS) V /V 600 and 800 V A1 DRM RRM I 20 to 30 mA GT DESCRIPTION G A2 Based on ST Snubberless technology providing high A1 commutation performances, the T820-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation perfor- ISOWATT220AB mances, such as washing-machines drum motor (Plastic) controllers. They comply with UL standards (ref. E81734). ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I RMS on-state current (Full sine wave) Tc= 100C 8 A T(RMS) I Non repetitive surge peak on-state F = 50Hz t = 20ms 100 A TSM current (Full cycle, T initial = 25C ) j F = 60Hz t = 16.7ms 105 2 2 2 ItI t Value for fusing tp = 10 ms 55 A s dI/dt Critical rate of rise of on-state current F = 120 Hz Tj = 125C 50 A/s I =2xI ,tr 100ns G GT V /V Non repetitive surge peak off-state tp = 10ms Tj = 25C V /V V DSM RSM DRM RRM voltage + 100 I Peak gate current tp = 20s Tj = 125C 4 A GM P Average gate power dissipation Tj = 125C 1 W G(AV) T Storage junction temperature range -40to+150 C stg T Operating junction temperature range -40to+125 j March 2004 - Ed: 2 1/5T820W / T830W ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test Conditions Quadrant T820 T830 Unit (1) I V =12V R =33 I-II-III MAX. 20 30 mA GT D L V I-II-III MAX. 1.3 V GT V V =V R =3.3k Tj = 125C I-II-III MIN. 0.2 V GD D DRM L (2) I I = 250mA MAX. 35 50 mA H T I I = 1.2I I - III MAX. 50 70 mA L G GT II MAX. 60 80 mA (2) dV/dt V =67% V Gate open Tj = 125C MIN. 300 500 V/s D DRM (2) (dI/dt)c Without snubber Tj = 125C MIN. 4.5 5.5 A/ms STATIC CHARACTERISTICS Symbol Test Conditions Value Unit (2) V I = 11A tp = 380s Tj = 25C MAX. 1.4 V TM TM (2) V Threshold voltage Tj = 125C MAX. 0.85 V TO (2) R Dynamic resistance Tj = 125C MAX. 40 m d I V =V Tj = 25C MAX 5 A DRM DRM RRM I Tj = 125C 1 mA RRM Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 C/W Rth(j-c) Junction to case (AC) 3.1 C/W PRODUCT SELECTOR Part Number Voltage Sensitivity Type Package T820-600W 600V 20 mA Snubberless ISOWATT220AB T820-800W 800V 20 mA Snubberless ISOWATT220AB T830-600W 600V 30 mA Snubberless ISOWATT220AB T830-800W 800V 30 mA Snubberless ISOWATT220AB 2/5

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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