T630W 6 A Snubberless Triac Features A2 I = 6 A T(RMS) G V = V = 600 and 800 V DRM RRM A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The A1 T630W is especially suited for high inductance A2 G loads. This device complies with UL standards ISOWATT220AB (Ref. E81734). (Plastic) Table 1. Device summary Symbol Value Unit I 6A T(RMS) V /V 600 and 800 V DRM RRM I 30 mA GT February 2010 Doc ID 3764 Rev 3 1/8 www.st.com 8Characteristics T630W 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit I On-state rms current (full sine wave) T = 105C 6 A T(RMS) c F = 50 Hz t = 20 ms 80 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25C) j F = 60 Hz t = 16.7 ms 84 ItI t Value for fusing t = 10 ms 36 A s p Critical rate of rise of on-state dI/dt F = 120 Hz 50 A/s current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125C 4 A GM p j P Average gate power dissipation T = 125C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit (1) I I - II - III Max. 30 mA GT V = 12 V R = 30 D L V I - II - III Max. 1.3 V GT V V = V R = 3.3 k T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA Max. 50 mA H T I - III 70 I I = 1.2 I Max. mA L G GT II 80 (2) dV/dt V = 67 %V gate open T = 125 C Min. 500 V/s D DRM j (2) (dI/dt)c Without snubber T = 125 C Min. 4.5 A/ms j 1. Minimum I is guaranted at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 Table 4. Static characteristics Symbol Test conditions Value Unit (1) V I = 8.5 A t = 380 s T = 25 C Max. 1.4 V T TM p j (1) V Threshold voltage T = 125 C Max. 0.85 V t0 j (1) R Dynamic resistance T = 125 C Max. 50 m d j T = 25 C 5A I j DRM V = V Max. DRM RRM I T = 125 C 1 mA RRM j 1. For both polarities of A2 referenced to A1 2/8 Doc ID 3764 Rev 3