X-On Electronics has gained recognition as a prominent supplier of T810-800B-TR Triacs across the USA, India, Europe, Australia, and various other global locations. T810-800B-TR Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T810-800B-TR STMicroelectronics

T810-800B-TR electronic component of STMicroelectronics
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Part No.T810-800B-TR
Manufacturer: STMicroelectronics
Category: Triacs
Description: STMicroelectronics Triacs 8A Triacs
Datasheet: T810-800B-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2831 ea
Line Total: USD 0.28 
Availability - 97
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2831
10 : USD 0.2763
30 : USD 0.2719
100 : USD 0.2667

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T810-800B-TR from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T810-800B-TR and other electronic components in the Triacs category and beyond.

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BTA08, BTB08, T810 T835, T850 Datasheet Snubberless, logic level and standard 8 A Triacs A2 Features On-state rms current, I 8 A T(RMS) G Repetitive peak off-state voltage, V / V 600 V to 800 V DRM RRM A1 A2 Triggering gate current, I 5 to 50 mA GT Description G G Available either in through-hole and surface-mount packages, these devices are A2 A2 A1 A1 suitable for general purpose AC switching. They can be used as an ON/OFF function TO-220AB TO-220AB Ins. in applications such as static relays, heating regulation, induction motor starting A2 circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTA, BTB08 xxxxW and T8 series) are specially G A2 A1 recommended for use on inductive loads, thanks to their high commutation DPAK performance. A2 A2 Logic level versions are designed to interface directly with low power drivers such as Microcontrollers. G A2 A1 By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated G A2 IPAK DPAK at 2500 V ) in compliance with UL standards (file ref.: E81734). A1 RMS Product status link BTA08 BTB08 T810 T835 T850 DS2114 - Rev 15 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.BTA08, BTB08, T810, T835, T850 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit T = 110 C IPAK, DPAK,TO-220AB, DPAK c I RMS on-state current (full sine wave) 8 A T(RMS) T = 100 C TO-220AB Ins. c f = 50 Hz t = 20 ms 80 Non repetitive surge peak on-state current (full I A TSM cycle, T initial = 25 C) j t = 16.7 ms f = 60 Hz 84 p 2 2 2 t = 10 ms I t I t value for fusing 36 A s p Critical rate of rise of on-state current I = 2 x G T = 125 C dl/dt f = 120 Hz 50 A/s j I , tr 100 ns GT I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) Snubberless and logic level (3 j quadrants) T8 BTA08/BTB08 Symbol Parameter Quadrant Unit 10 35 50 TW SW CW BW (1) I I - II - III Max. 10 35 50 5 10 35 50 mA GT V = 12 V, R = 30 D L V I - II - III Max. 1.2 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA I - II - III Max. 15 35 75 10 15 35 50 mA T H I - III Max. 25 50 70 10 25 50 70 I I = 1.2 x I mA L G GT II Max. 30 60 110 15 30 60 80 (2) V = 67% V , gate open, T = 125 C Max. 40 400 1000 20 40 400 1000 V/s dV/dt D DRM j (dV/dt)c = 0.1 V/s, T = 125 C Min. 5.4 3.5 5.4 j (2) (dV/dt)c = 10 V/s, T = 125 C Min. 2.8 1.5 2.98 A/ms (dl/dt)c j Without snubber, T = 125 C Min. 4.5 7 4.5 7 j 1. Minimum I is guaranteed at 5 % of I max. GT GT 2. For both polarities of A2 referenced to A1 DS2114 - Rev 15 page 2/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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