X-On Electronics has gained recognition as a prominent supplier of T435-800B-TR Triacs across the USA, India, Europe, Australia, and various other global locations. T435-800B-TR Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T435-800B-TR STMicroelectronics

T435-800B-TR electronic component of STMicroelectronics
T435-800B-TR STMicroelectronics
T435-800B-TR Triacs
T435-800B-TR  Semiconductors

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See Product Specifications
Part No. T435-800B-TR
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; 35mA; SMD; Snubberless™; Reel, tape; DPAK
Datasheet: T435-800B-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.6529 ea
Line Total: USD 65.29 
Availability - 412
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
412
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 100
Multiples : 1
100 : USD 0.6529
101 : USD 0.6464
103 : USD 0.6288
119 : USD 0.5477
250 : USD 0.383

23
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 1.5825
10 : USD 1.3517
30 : USD 0.9318
100 : USD 0.7828
500 : USD 0.7317
1000 : USD 0.7091

1519
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.966
5 : USD 0.658
25 : USD 0.5824
35 : USD 0.5026
96 : USD 0.4746

2156
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 857
Multiples : 1
857 : USD 0.547
1000 : USD 0.5167

412
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 101
Multiples : 1
101 : USD 0.6464
103 : USD 0.6288
119 : USD 0.5477
250 : USD 0.383

   
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Technology
Type Of Semiconductor Component
Max Load Current
Gate Current
Max Off-State Voltage
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We are delighted to provide the T435-800B-TR from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T435-800B-TR and other electronic components in the Triacs category and beyond.

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T4 series 4 A Triacs Datasheet production data . Table 1. Main characteristics Symbol Value Unit I 4A T(rms) * V , V 600 to 800 V DRM RRM I 5 to 35 mA GT Table 2. Device summary * 2 % 7 (1) . ,3 Symbol Marking * T405-xxxB T405-xxxB-TR T405-xxxH * . 3 T405-xxxT T410-xxxB T410-xxxB-TR see Table 11 Features T410-xxxH Three quadrants Triac T410-xxxT 600 to 800 V V /V DRM RRM T435-xxxB T435-xxxB-TR Applications T435-xxxH General purpose AC inductive loads T435-xxxT Motor control circuits 1. xxx = Voltage: 600 V, 700 V or 800 V (see Table 10). Small home appliances Description Based on STs Snubberless / logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electro valves, kitchen aid equipments, power tools, and dishwashers. November 2016 DocID7699 Rev 9 1/15 This is information on a product in full production. www.st.com 15Characteristics T4 series 1 Characteristics Table 3. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit On-state rms current IPAK, DPAK, I T = 110 C 4 A T(rms) c TO-220AB (full sine wave) F = 50 Hz t = 20 ms 30 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 31 ItI t value for fusing t = 10 ms 5.1 A s p Critical rate of rise of on-state dI/dt F = 120 Hz T = 125 C 50 A/s j current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to +150 stg C T Operating junction temperature range - 40 to +125 j Table 4. Electrical characteristics (T = 25 C, unless otherwise stated) j Value Unit Symbol Test conditions Quadrant T405 T410 T435 (1) I V = 12 V, R = 30 I - II - III Max. 5 10 35 mA GT D L V V = 12 V, R = 30 I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k , T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA Max. 10 15 35 mA H T I - III Max. 102550 I I = 1.2 I mA L G GT II Max. 15 30 60 (2) dV/dt V = 67% V , gate open T = 125 C Min. 20 40 400 V/s D DRM j (dV/dt)c = 0.1 V/s 1.8 2.7 (2) (dI/dt)c (dV/dt)c = 10 V/s T = 125 C Min. 0.9 2.0 A/ms j (without snubber) 2.5 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 2/15 DocID7699 Rev 9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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