X-On Electronics has gained recognition as a prominent supplier of T435-800H Triacs across the USA, India, Europe, Australia, and various other global locations. T435-800H Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T435-800H STMicroelectronics

T435-800H electronic component of STMicroelectronics
T435-800H STMicroelectronics
T435-800H Triacs
T435-800H  Semiconductors

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See Product Specifications
Part No. T435-800H
Manufacturer: STMicroelectronics
Category: Triacs
Description: STMicroelectronics Triacs 4.0 Amp 800 Volt
Datasheet: T435-800H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
89: USD 0.4053 ea
Line Total: USD 36.07 
Availability - 0
MOQ: 89  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 2.8424
10 : USD 2.4459
100 : USD 1.9077
500 : USD 1.5759
1000 : USD 1.3693

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 89
Multiples : 1
89 : USD 0.4053
400 : USD 0.3696
1500 : USD 0.3629
5000 : USD 0.3296

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.3055

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 2.7826
10 : USD 1.0414
25 : USD 0.9486
100 : USD 0.7952
500 : USD 0.6688
1000 : USD 0.5525
3000 : USD 0.5515

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T435-800H from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T435-800H and other electronic components in the Triacs category and beyond.

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T4 series 4 A Triacs Datasheet production data . Table 1. Main characteristics Symbol Value Unit I 4A T(rms) * V , V 600 to 800 V DRM RRM I 5 to 35 mA GT Table 2. Device summary * 2 % 7 (1) . ,3 Symbol Marking * T405-xxxB T405-xxxB-TR T405-xxxH * . 3 T405-xxxT T410-xxxB T410-xxxB-TR see Table 11 Features T410-xxxH Three quadrants Triac T410-xxxT 600 to 800 V V /V DRM RRM T435-xxxB T435-xxxB-TR Applications T435-xxxH General purpose AC inductive loads T435-xxxT Motor control circuits 1. xxx = Voltage: 600 V, 700 V or 800 V (see Table 10). Small home appliances Description Based on STs Snubberless / logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electro valves, kitchen aid equipments, power tools, and dishwashers. November 2016 DocID7699 Rev 9 1/15 This is information on a product in full production. www.st.com 15Characteristics T4 series 1 Characteristics Table 3. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit On-state rms current IPAK, DPAK, I T = 110 C 4 A T(rms) c TO-220AB (full sine wave) F = 50 Hz t = 20 ms 30 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 31 ItI t value for fusing t = 10 ms 5.1 A s p Critical rate of rise of on-state dI/dt F = 120 Hz T = 125 C 50 A/s j current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to +150 stg C T Operating junction temperature range - 40 to +125 j Table 4. Electrical characteristics (T = 25 C, unless otherwise stated) j Value Unit Symbol Test conditions Quadrant T405 T410 T435 (1) I V = 12 V, R = 30 I - II - III Max. 5 10 35 mA GT D L V V = 12 V, R = 30 I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k , T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA Max. 10 15 35 mA H T I - III Max. 102550 I I = 1.2 I mA L G GT II Max. 15 30 60 (2) dV/dt V = 67% V , gate open T = 125 C Min. 20 40 400 V/s D DRM j (dV/dt)c = 0.1 V/s 1.8 2.7 (2) (dI/dt)c (dV/dt)c = 10 V/s T = 125 C Min. 0.9 2.0 A/ms j (without snubber) 2.5 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 2/15 DocID7699 Rev 9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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