T810T-8T STMicroelectronics

T810T-8T Datasheet 8 A 800 V logic level Triac in TO-220AB package Features A2 Medium current Triac Three quadrants ECOPACK2 compliant G Applications A1 General purpose AC line load switching A2 Motor control circuits Small home appliances Lighting Inrush current limiting circuits G Overvoltage crowbar protection A2 A1 Description TO-220AB Available in through-hole package, the T810T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller due to its 10 mA gate current requirement. Product status link T810T-8T Product summary Order code T810T-8T Package TO-220AB I 8 A T(RMS) V /V 800 V DRM RRM V /V 900 V DSM RSM I 10 mA GT DS10471 - Rev 2 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.T810T-8T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 131 C On-state RMS current (full sine wave) 8 A T(RMS) c F = 50 Hz t = 20 ms 60 I Non repetitive surge peak on-state current (T initial = 25 C) A TSM j F = 60 Hz t = 16.7 ms 63 2 2 2 I t value for fusing, (T initial = 25 C) t = 10 ms 24 I t p A s j T = 150 C 600 j V /V Repetitive surge peak off-state voltage V DRM RRM T = 125 C 800 j V /V Non repetitive surge peak off-state voltage t = 10 ms 900 V DSM RSM p Critical rate of rise of on-state current dl/dt F = 100 Hz 100 A/s I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature soldering during 10 s 260 C L Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 0.5 (1) I V = 12 V, R = 30 I - II - III mA D L GT Max. 10 V V = 12 V, R = 30 I - II - III Max. 1.3 V GT D L V V = V , R = 3.3 k , T = 150 C I - II - III Min. 0.2 V GD D DRM L j (1) I I = 500 mA T Max. 15 mA H I - III 20 I I = 1.2 x I Max. mA L G GT II 25 V = 536 V, gate open T = 125 C 250 D j (1) Min. V/s dV/dt T = 150 C VD = 402 V, gate open 170 j T = 125 C 6.0 j (dV/dt)c = 0.1 V/s T = 150 C 4.2 j (1) (dI/dt)c Min. A/ms T = 125 C 3.2 j (dV/dt)c = 10 V/s T = 150 C 1.4 j 1. For both polarities of A2 referenced to A1 DS10471 - Rev 2 page 2/11