X-On Electronics has gained recognition as a prominent supplier of T835-800B Triacs across the USA, India, Europe, Australia, and various other global locations. T835-800B Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T835-800B STMicroelectronics

T835-800B electronic component of STMicroelectronics
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Part No.T835-800B
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; 35mA; SMD; tube; DPAK
Datasheet: T835-800B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.176 ea
Line Total: USD 1.18 
Availability - 96
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2555
10 : USD 1.0951
30 : USD 0.9951
100 : USD 0.8216
500 : USD 0.7756
1000 : USD 0.7552

96
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.176
10 : USD 0.847
36 : USD 0.4872
99 : USD 0.4606
9000 : USD 0.4522

   
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T835-800B from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T835-800B and other electronic components in the Triacs category and beyond.

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BTA08, BTB08, T810 T835, T850 Datasheet Snubberless, logic level and standard 8 A Triacs A2 Features On-state rms current, I 8 A T(RMS) G Repetitive peak off-state voltage, V / V 600 V to 800 V DRM RRM A1 A2 Triggering gate current, I 5 to 50 mA GT Description G G Available either in through-hole and surface-mount packages, these devices are A2 A2 A1 A1 suitable for general purpose AC switching. They can be used as an ON/OFF function TO-220AB TO-220AB Ins. in applications such as static relays, heating regulation, induction motor starting A2 circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTA, BTB08 xxxxW and T8 series) are specially G A2 A1 recommended for use on inductive loads, thanks to their high commutation DPAK performance. A2 A2 Logic level versions are designed to interface directly with low power drivers such as Microcontrollers. G A2 A1 By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated G A2 IPAK DPAK at 2500 V ) in compliance with UL standards (file ref.: E81734). A1 RMS Product status link BTA08 BTB08 T810 T835 T850 DS2114 - Rev 15 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.BTA08, BTB08, T810, T835, T850 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit T = 110 C IPAK, DPAK,TO-220AB, DPAK c I RMS on-state current (full sine wave) 8 A T(RMS) T = 100 C TO-220AB Ins. c f = 50 Hz t = 20 ms 80 Non repetitive surge peak on-state current (full I A TSM cycle, T initial = 25 C) j t = 16.7 ms f = 60 Hz 84 p 2 2 2 t = 10 ms I t I t value for fusing 36 A s p Critical rate of rise of on-state current I = 2 x G T = 125 C dl/dt f = 120 Hz 50 A/s j I , tr 100 ns GT I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) Snubberless and logic level (3 j quadrants) T8 BTA08/BTB08 Symbol Parameter Quadrant Unit 10 35 50 TW SW CW BW (1) I I - II - III Max. 10 35 50 5 10 35 50 mA GT V = 12 V, R = 30 D L V I - II - III Max. 1.2 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA I - II - III Max. 15 35 75 10 15 35 50 mA T H I - III Max. 25 50 70 10 25 50 70 I I = 1.2 x I mA L G GT II Max. 30 60 110 15 30 60 80 (2) V = 67% V , gate open, T = 125 C Max. 40 400 1000 20 40 400 1000 V/s dV/dt D DRM j (dV/dt)c = 0.1 V/s, T = 125 C Min. 5.4 3.5 5.4 j (2) (dV/dt)c = 10 V/s, T = 125 C Min. 2.8 1.5 2.98 A/ms (dl/dt)c j Without snubber, T = 125 C Min. 4.5 7 4.5 7 j 1. Minimum I is guaranteed at 5 % of I max. GT GT 2. For both polarities of A2 referenced to A1 DS2114 - Rev 15 page 2/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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