X-On Electronics has gained recognition as a prominent supplier of 2N6344AG Triacs across the USA, India, Europe, Australia, and various other global locations. 2N6344AG Triacs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

2N6344AG ON Semiconductor

2N6344AG electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6344AG
Manufacturer: ON Semiconductor
Category: Triacs
Description: TRIAC Standard 600 V 12 A Through Hole TO-220AB
Datasheet: 2N6344AG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.101 ea
Line Total: USD 2.1 
Availability - 837
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
837
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.101
10 : USD 1.749
100 : USD 1.397
500 : USD 1.155
1000 : USD 0.9966

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Breakover Current Ibo Max
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6344AG from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6344AG and other electronic components in the Triacs category and beyond.

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Thyristors Datasheet 2N6344A, 2N6348A, 2N6349A Surface Mount 600-800V Pb Description The 2N634xA is designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features Blocking Voltage to 800 V Gate Triggering Guaranteed in all Four Quadrants All Diffused and Glass Passivated Junctions for For 400 Hz Operation, Greater Parameter Uniformity Consult Factory and Stability 8.0 A Devices Available as Additional Information Small, Rugged, Thermowatt 2N6344 thru 2N6349 Construction for Low Thermal PbFree Package is Available Resistance, High Heat Dissipation and Durability Functional Diagram Resources Accessories Samples Pin Out CASE 221A STYLE 4 1 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/11/21Thyristors Datasheet 2N6344A, 2N6348A, 2N6349A Surface Mount 600-800V Maximum Ratings and Thermal Characteristics (TJ = 25C unless otherwise noted) Rating Symbol Value Unit 2N6344A, 600 *Peak Repetitive Off-State Voltage (Note 1) V , 2N6348A DRM V (T = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) V J RRM 2N6349A 800 (T =+80C) 12 *On-State RMS Current C I A T (RMS) (Full Cycle Sine Wave 50 to 60 Hz) (T =+90C) 6.0 C *Peak NonRepetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, T = +80C) I 100 A C TSM Preceded and followed by rated current 2 Circuit Fusing Considerations (t = 8.3 ms) I t 59 As *Peak Gate Power (T = +80C, Pulse Width = 2 s) P 20 W C GM *Average Gate Power (T = +80C, t = 8.3 ms) P 0.5 W C G(AV) *Peak Gate Current (T = +80C, Pulse Width = 2.0 s) I 2.0 A C GM *Peak Gate Voltage (T = +80C, Pulse Width = 2.0 s) V 10 V C GM *Operating Junction Temperature Range T -40 to +125 C J *Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. * Indicates JEDEC Registered Data. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. DRM RRM Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 2.0 C/W 8JC Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Indicates JEDEC Registered Data. Electrical Characteristics - OFF (TC = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 10 A *Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 100C I - - 2.0 mA D DRM RRM J RRM 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/11/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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