Thyristors 4 Amp Sensitive & Standard Triacs RoHS Lxx04xx & Qxx04xx Series Description The Lxx04xx and Qxx04xx are 4 Amp bidirectional solid state switch series. They are designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Sensitive type devices guarantee gate control in Quadrants I & IV as needed for digital control circuitry. Standard type devices normally operate in Quadrants I & III triggered from AC line. Agency Approval Features & Benefits R o H S - c o m p li a nt No contacts to wear out Agency Agency File Number from reaction of switching G lass passivated events E71639 junctions Restricted (or limited) RFI Notes: V oltage capability up to - L Package only. generation, depending on - 400V and 600V for Sensitive Triac (L Device Type) 1000 V - 400V, 600V, 800V, or 1000V for Standard Triac (Q Device Type) activation point of Surge capability up to sine wave 55 A R equires only a short gate Main Features The L-package has activation pulse in each an isolation rating of half-cycle Symbol Value Unit 2500V RMS I 4 A T(RMS) S olid-state switching V /V 400, 600, 800 or 1000 V eliminates arcing or DRM RRM contact bounce that I 3 to 25 mA GT (Q1) create voltage transients Schematic Symbol Applications Typical applications are AC solid-state switches, power tools, home/brown goods and white goods appliances. MT2 MT1 Sensitive gate Triacs can be directly driven by microprocessor or popular opto-couplers/isolators. Internally constructed isolated packages are offered for G ease of heat sinking with highest isolation voltage. Absolute Maximum Ratings Sensitive Triacs (4 Quadrants) Symbol Parameter Value Unit Lxx04Ly T = 90C RMS on-state current C I 4 A T(RMS) (full sine wave) Lxx04Ry/Lxx04Vy/Lxx04Dy T = 95C C f = 50 Hz t = 20 ms 33 Non repetitive surge peak on-state current I A TSM (full cycle, T initial = 25C) f = 60 Hz t = 16.7 ms 40 J 2 2 2 I t I t Value for fusing t = 8.3 ms 6.6 A s p Critical rate of rise of on-state current di/dt f = 120 Hz T = 110C 50 A/s J (I = 50mA with 0.1s rise time) G I Peak gate trigger current t =20s T = 110C 4 A GTM p J P Average gate power dissipation T = 110C 0.3 W G(AV) J T Storage temperature range -40 to 150 C stg T Operating junction temperature range -40 to 110 C J Note: xx = voltage/10, y = sensitivity 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.11/17/20Thyristors 4 Amp Sensitive & Standard Triacs Absolute Maximum Ratings Standard Triacs Symbol Parameter Value Unit Qxx04Ly T = 105C RMS on-state current C I 4 A T(RMS) (full sine wave) Qxx04Ry/Qxx04Vy/Qxx04Dy T = 110C C f = 50 Hz t = 20 ms 46 Non repetitive surge peak on-state current I A TSM (full cycle, T initial = 25C) f = 60 Hz t = 16.7 ms 55 J 2 2 2 I t I t Value for fusing t = 8.3 ms 12.5 A s p Critical rate of rise of on-state current di/dt f = 120 Hz T = 125C 50 A/s J (I = 50mA with 0.1s rise time) G I Peak gate trigger current t =20s T = 125C 4 A GTM p J P Average gate power dissipation T = 125C 0.3 W G(AV) J T Storage temperature range -40 to 150 C stg T Operating junction temperature range -40 to 125 C J Note: xx = voltage/10, y = sensitivity Electrical Characteristics (T = 25C, unless otherwise specified) Sensitive Triac (4 Quadrants) J Symbol Test Conditions Quadrant Lxx04x3 Lxx04x5 Lxx04x6 Lxx04x8 Unit I II III 3 5 5 10 I V = 12V R = 60 MAX. mA GT D L IV 3 5 10 20 V V = 12V R = 60 ALL MAX. 1.3 V GT D L V V = V R = 3.3 k T = 110C ALL MIN. 0.2 V GD D DRM L J I I = 100mA MAX. 5 10 10 15 mA H T 400V 25 25 30 35 dv/dt V = V Gate Open T = 100C TYP. V/s D DRM J 600V 15 15 20 25 (dv/dt)c (di/dt)c = 2.16 A/ms T = 110C TYP. 0.5 1 1 1 V/s J t I = 2 x I PW = 15s I = 5.6 A(pk) TYP. 2.8 3.0 3.0 3.2 s gt G GT T Electrical Characteristics (T = 25C, unless otherwise specified) Standard Triac J Symbol Test Conditions Quadrant Qxx04x3 Qxx04x4 Unit I II III MAX. 10 25 I V = 12V R = 60 mA GT D L IV TYP. 25 50 V V = 12V R = 60 I II III MAX. 1.3 1.3 V GT D L V V = V R = 3.3 k T = 125C ALL MIN. 0.2 0.2 V GD D DRM L J I I = 200mA MAX. 20 30 mA H T 400V 40 75 V = V Gate Open T = 125C 600V 30 50 D DRM J dv/dt MIN. V/s 800V 40 V = V Gate Open T = 100C 1000V 50 D DRM J (dv/dt)c (di/dt)c = 2.16 A/ms T = 125C TYP. 2 2 V/s J t I = 2 x I PW = 15s I = 5.6 A(pk) TYP. 2.5 3.0 s gt G GT T dv/dt VD = 2/3 VDRM Gate Open T = 125C 800V 40 V/s J Note: xx = voltage/10, x = package 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.11/17/20