X-On Electronics has gained recognition as a prominent supplier of 2N6387G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6387G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6387G ON Semiconductor

Hot 2N6387G electronic component of ON Semiconductor
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Part No.2N6387G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 10A 60V Bipolar Power NPN
Datasheet: 2N6387G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3657 ea
Line Total: USD 0.37 
Availability - 2
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3657

762
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.154
10 : USD 0.8442
100 : USD 0.7966
500 : USD 0.7004
1000 : USD 0.6484

291
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 50
Multiples : 50
50 : USD 0.9077
100 : USD 0.842
500 : USD 0.7159
1000 : USD 0.6336
2800 : USD 0.6175

115
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8606
10 : USD 1.5953
30 : USD 1.4275
100 : USD 1.2576
500 : USD 1.1794
1000 : USD 1.147

4178
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.702
10 : USD 0.9246
100 : USD 0.836
500 : USD 0.7314
1000 : USD 0.6612
2800 : USD 0.6463

30
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.624
10 : USD 1.3034
19 : USD 0.938
52 : USD 0.8876
500 : USD 0.854

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6387G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6387G and other electronic components in the Darlington Transistors category and beyond.

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2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. www.onsemi.com Features High DC Current Gain h = 2500 (Typ) I = 4.0 Adc FE C CollectorEmitter Sustaining Voltage 100 mAdc DARLINGTON NPN SILICON V = 60 Vdc (Min) 2N6387 CEO(sus) POWER TRANSISTORS = 80 Vdc (Min) 2N6388 8 AND 10 AMPERES Low CollectorEmitter Saturation Voltage 65 WATTS, 60 80 VOLTS V = 2.0 Vdc (Max) I CE(sat) C = 5.0 Adc 2N6387, 2N6388 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors TO220AB Compact Package 4 These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit 1 2 CollectorEmitter Voltage 2N6387 V 60 Vdc CEO 3 2N6388 80 TO220 CollectorBase Voltage 2N6387 V 60 Vdc CB CASE 221A 2N6388 80 STYLE 1 EmitterBase Voltage V 5.0 Vdc EB MARKING DIAGRAM Collector Current Continuous I 10 Adc C Peak 15 Base Current I 250 mAdc B Total Power Dissipation T = 25 C P 65 W C D Derate above 25 C 0.52 W/C 2N638xG Total Power Dissipation T = 25 C P 2.0 W D A AYWW Derate above 25 C 0.016 W/C Operating and Storage Junction, T , T 65 to +150 C J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2N638x = Device Code 1. Indicates JEDEC Registered Data. x = 7 or 8 G = PbFree Package A = Assembly Location THERMAL CHARACTERISTICS Y = Year Characteristics Symbol Max Unit WW = Work Week Thermal Resistance, JunctiontoCase R 1.92 C/W JC ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient 62.5 R C/W JA Device Package Shipping 2N6387G TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please 2N6388G TO220 50 Units / Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 15 2N6387/D2N6387, 2N6388 T T A C 4.0 80 3.0 60 T C 2.0 40 T A 1.0 20 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 200 mAdc, I = 0) 2N6387 C B 60 2N6388 80 Collector Cutoff Current I mAdc CEO (V = 60 Vdc, I = 0) 2N6387 CE B 1.0 (V = 80 Vdc, I = 0) 2N6388 CE B 1.0 Collector Cutoff Current I Adc CEX (V = 60 Vdc, V = 1.5 Vdc) 2N6387 CE EB(off) 300 (V 80 Vdc, V = 1.5 Vdc) 2N6388 CE EB(off) 300 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) 2N6387 CE EB(off) C 3.0 mAdc (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) 2N6388 CE EB(off) C 3.0 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 5.0 mAdc BE C EBO ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 5.0 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 1000 20,000 (I = 1 0 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 5.0 Adc, I = 0.01 Adc) 2N6387, 2N6388 C B 2.0 (I = 10 Adc, I = 0.1 Adc) 2N6387, 2N6388 C B 3.0 BaseEmitter On Voltage V Vdc BE(on) (I = 5.0 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 2.8 (I = 10 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 4.5 DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 MHz) h 20 C CE test fe Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 200 pF CB E ob SmallSignal Current Gain (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 1000 C CE fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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