Ordering number:EN2369A NPN Epitaxial Planar Silicon Transistor 2SD1817 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm 2045B Features 2SD1817 6.5 2.3 High DC current gain. 5.0 0.5 4 Small and slim package permitting the 2SD1817- applied sets to be made more compact. 0.85 0.7 1.2 1 : Base 0.6 0.5 2 : Collector 3 : Emitter 1 23 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B 2SD1817 6.5 2.3 5.0 0.5 4 0.5 0.85 12 3 1 : Base 0.6 1.2 2 : Collector 0~0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22599TH (KT)/8219MO/5217TA, TS No.23691/4 0.8 5.5 1.5 2.5 7.0 0.8 5.5 1.5 1.6 7.5 7.0 1.22SD1817 Specifications Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni CVollector-to-Base Voltage 8V0 CBO CVollector-to-Emitter Voltage 6V0 CEO EVmitter-to-Base Voltage 6V EBO CIollector Current 3A C CIollector Current (Pulse) 6A CP 1W CPollector Dissipation C Tc=25C 1W5 Jjunction Temperature T 150 C Sgtorage Temperature Tst 55 to +150 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma CIollector Cutoff Current V =60V, I=00 1A CBO CB E EImitter Cutoff Current V =5V, I=50 2A. m EBO EB C h 1V =2V, I =1A 2000 FE CE C DC Current Gain h 2V =2V, I =2A 1000 FE CE C CVollector-to-Emitter Saturation Voltage I =2A, I =4mA 1V.5 CE(sat) C B BVase-to-Emitter Saturation Voltage I =2A, I=04mA 2V. BE(sat) C B CVollector-to-Base Breakdown Voltage I =1mA, I =0 8V0 (BR)CBO C E CVollector-to-Emitter Breakdown Voltage I =25mA, R = 6V0 (BR)CEO C BE Electrical Connection No.23692/4