MMSTA63/MMSTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction A Complementary NPN Types Available C (MMSTA13/MMSTA14) SOT-323 Ultra-Small Surface Mount Package B C Ideal for Medium Power Amplification and Switching Dim Min Max High Current Gain A 0.25 0.40 BE Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 G Gree Device (Note 3 and 4) C 2.00 2.20 H D 0.65 Nominal K E 0.30 0.40 Mechanical Data M G 1.20 1.40 Case: SOT-323 H 1.80 2.20 J Case Material: Molded Plastic,Gree Molding D E L J 0.0 0.10 Compound, Note 4. UL Flammability Classification Rating 94V-0 K 0.90 1.00 Moisture Sensitivity: Level 1 per J-STD-020C L 0.25 0.40 Terminal Connections: See Diagram M 0.10 0.18 Terminals: Solderable per MIL-STD-202, Method 208 C 0 8 Lead Free Plating (Matte Tin Finish annealed over Alloy All Dimensions in mm 42 leadframe). MMSTA63 Marking K2E, K3E, See Page 3 MMSTA64 Marking K3E, See Page 3 Ordering & Date Code Information: See Page 3 B E Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -30 V V CBO Collector-Emitter Voltage V -30 V CEO Emitter-Base Voltage -10 V V EBO Collector Current - Continuous I -500 mA C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Emitter Breakdown Voltage V -30 V I = -100A V = 0V (BR)CEO C BE Collector Cutoff Current I -100 nA V = -30V, I = 0 CBO CB E Emitter Cutoff Current I -100 nA V = -10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) DC Current Gain MMSTA63 I = -10mA, V = -5.0V 5,000 C CE MMSTA64 10,000 I = -10mA, V = -5.0V C CE h FE MMSTA63 10,000 I = -100mA, V = -5.0V C CE 20,000 MMSTA64 I = -100mA, V = -5.0V C CE Collector-Emitter Saturation Voltage -1.5 V V I = -100mA, I = -100A CE(SAT) C B Base- Emitter Saturation Voltage -2.0 V V I = -100mA, V = -5.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS V = -5.0V, I = -10mA, CE C Current Gain-Bandwidth Product 125 MHz f T f = 100MHz Notes: 5. Short duration pulse test used to minimize self-heating effect. 200 1.20 1.15 1.10 1.05 150 1.00 0.95 0.90 0.85 100 0.80 0.75 0.70 0.65 50 0.60 0.55 0.50 0.45 0 0.40 0 25 50 150 175 200 75 100 125 1 10 100 1,000 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Fig. 2, Collector Emitter Saturation Voltage Ambient Temperature vs. Collector Current 10,000,000 1.6 1.5 1.4 1,000,000 1.3 1.2 1.1 100,000 1.0 0.9 0.8 0.7 10,000 0.6 0.5 1,000 0.4 0.3 0.2 100 0.1 100 1 10 1,000 0.1 1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 3, DC Current Gain vs. Fig. 4, Base Emitter Voltage vs. Collector Current Collector Current MMSTA63/MMSTA64 DS30159 Rev. 9 - 2 2 of 3 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN FE P , POWER DISSIPATION (mW) D V, COLLECTOR TO EMITTER CE(SAT) V , BASE EMITTER VOLTAGE (V) BE(ON) SATURATION VOLTAGE (V)