TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor November 2014 TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor Features Equivalent Circuit C Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: B h = 1000 V = -4 V, I = -1 A (Minimum) FE CE C Low Collector-Emitter Saturation Voltage Industrial Use TO-220 1 Complementary to TIP110 / TIP111 / TIP112 R1 R2 1.Base 2.Collector 3.Emitter E Ordering Information Part Number Top Mark Package Packing Method TIP115 TIP115 TO-220 3L (Single Gauge) Bulk TIP117TU TIP117 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP115 -60 V Collector-Base Voltage V CBO TIP117 -100 TIP115 -60 V Collector-Emitter Voltage V CEO TIP117 -100 V Emitter-Base Voltage -5 V EBO Collector Current (DC) -2 A I C I Collector Current (Pulse) -4 A CP I Base Current (DC) -50 mA B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP115 / TIP117 Rev. 1.1.0TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor Thermal Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit Collector Dissipation (T = 25C) 2 A P W C Collector Dissipation (T = 25C) 50 C (1) Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Max. Unit TIP115 -60 Collector-Emitter Sustaining V (sus) I = -30 mA, I = 0 V CEO C B Voltage TIP117 -100 TIP115 V = -30 V, I =0-2 CE B I Collector Cut-Off Current mA CEO TIP117 V = -50 V, I =0-2 CE B TIP115 V = -60 V, I = 0 -1 CB E I Collector Cut-Off Current mA CBO TIP117 V = -100 V, I = 0 -1 CB E I Emitter Cut-Off Current V = -5 V, I = 0 -2 mA EBO EB C V = -4 V, I = -1 A 1000 CE C h DC Current Gain FE V = -4 V, I =- 2 A 500 CE C V (sat) Collector-Emitter Saturation Voltage I = -2 A, I = -8 mA -2.5 V CE C B V (on) Base-Emitter On Voltage V = -4 V, I = -2 A -2.8 V BE CE C V = -10 V, I = 0, CB E C Output Capacitance 200 pF ob f = 0.1 MHz Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP115 / TIP117 Rev. 1.1.0 2