MJD44E3, NJVMJD44E3T4G Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or driver MJD44E3, NJVMJD44E3T4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, R C/W JC Junction toCase 6.25 Thermal Resistance, R C/W JA JunctiontoAmbient (Note 2) 71.4 Lead Temperature for Soldering T 260 C L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Cutoff Current I A CES (V = Rated V , V = 0) 10 CE CEO BE Emitter Cutoff Current I A EBO (V = 7 Vdc) 1 EB ON CHARACTERISTICS CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 5 Adc, I = 10 mAdc) C B 1.5 (I = 10 Adc, I = 20 mAdc) C B 2 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 5 Adc, I = 10 mAdc) 2.5 C B DC Current Gain h FE (V = 5 Vdc, I = 5 Adc) 1000 CE C DYNAMIC CHARACTERISTICS Collector Capacitance C pF cb (V = 10 Vdc, f = 1 MHz) 130 CB test SWITCHING TIMES Delay and Rise Times t + t s d r (I = 10 Adc, I = 20 mAdc) 0.6 C B1 Storage Time t s s (I = 10 Adc, I = I = 20 mAdc) 2 C B1 B2 Fall Time t s f (I = 10 Adc, I = I = 20 mAdc) 0.5 C B1 B2 T T A C 10 2.5 25 100 s 5 2 20 1 ms 3 T C 2 1.5 15 5 ms 1 T A BONDING WIRE LIMIT 1 10 0.5 THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.3 0.5 5 0.2 T = 25C SINGLE PULSE C 0.1 0 0 25 50 75 100 125 150 1233 5 10 200 50 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) T, TEMPERATURE ( C) CE Figure 1. Maximum Forward Bias Figure 2. Power Derating Safe Operating Area