TIP110, TIP111, TIP112 (NPN) TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors DARLINGTON Designed for generalpurpose amplifier and lowspeed switching applications. 2 AMPERE COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain h = 2500 (Typ) I FE C 6080100 VOLTS, 50 WATTS = 1.0 Adc CollectorEmitter Sustaining Voltage 30 mAdc MARKING V = 60 Vdc (Min) TIP110, TIP115 CEO(sus) DIAGRAM = 80 Vdc (Min) TIP111, TIP116 4 = 100 Vdc (Min) TIP112, TIP117 Low CollectorEmitter Saturation Voltage TO220AB V = 2.5 Vdc (Max) I CE(sat) C CASE 221A TIP11xG = 2.0 Adc STYLE 1 AYWW Monolithic Construction with Builtin BaseEmitter Shunt Resistors STYLE 1: PIN 1. BASE 1 PbFree Packages are Available* 2. COLLECTOR 2 3. EMITTER 3 4. COLLECTOR TIP11x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 8 TIP110/DTIP110, TIP111, TIP112 (NPN) TIP115, TIP116, TIP117 (PNP) MAXIMUM RATINGS TIP110, TIP111, TIP112, Rating Symbol TIP115 TIP116 TIP117 Unit CollectorEmitter Voltage V 60 80 100 Vdc CEO CollectorBase Voltage V 60 80 100 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 2.0 Adc C Peak 4.0 Base Current I 50 mAdc B Total Power Dissipation T = 25C P 50 W C D Derate above 25C 0.4 W/C Total Power Dissipation T = 25C P 2.0 W A D Derate above 25C 0.016 W/C Unclamped Inductive Load Energy Figure 13 E 25 mJ Operating and Storage Junction T , T 65 to + 150 C J stg THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 2.5 C/W JC Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) TIP110, TIP115 C B 60 TIP111, TIP116 80 TIP112, TIP117 100 Collector Cutoff Current I mAdc CEO (V = 30 Vdc, I = 0) TIP110, TIP115 CE B 2.0 (V = 40 Vdc, I = 0) TIP111, TIP116 CE B 2.0 (V = 50 Vdc, I = 0) TIP112 ,TIP117 CE B 2.0 Collector Cutoff Current I mAdc CBO (V = 60 Vdc, I = 0) TIP110, TIP115 CB E 1.0 (V = 80 Vdc, I = 0) TIP111, TIP116 CB E 1.0 (V = 100 Vdc, I = 0) TIP112, TIP117 CB E 1.0 Emitter Cutoff Current I 2.0 mAdc EBO (V = 5.0 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 Adc, V = 4.0 Vdc) C CE 1000 (I = 2.0 Adc, V = 4.0 Vdc) C CE 500 CollectorEmitter Saturation Voltage (I = 2.0 Adc, I = 8.0 mAdc) V 2.5 Vdc C B CE(sat) BaseEmitter On Voltage (I = 2.0 Adc, V = 4.0 Vdc) V 2.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I = 0.75 Adc, V = 10 Vdc, f = 1.0 MHz) h 25 C CE fe Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 CB E 200 TIP110, TIP111, TIP112 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2