Product Information

CMLT6427E TR

CMLT6427E TR electronic component of Central Semiconductor

Datasheet
Transistors Darlington SMD Small Signal Transistor NPN

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.1625 ea
Line Total: USD 975

0 - Global Stock
MOQ: 6000  Multiples: 6000
Pack Size: 6000
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Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 6000
Multiples : 6000

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CMLT6427E TR
Central Semiconductor

6000 : USD 0.1495
9000 : USD 0.1392
24000 : USD 0.1334
45000 : USD 0.1323
99000 : USD 0.1277

     
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CMLT6427E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT SILICON DESCRIPTION: NPN DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT6427E is an Enhanced Specification silicon NPN Darlington transistor. High DC current gains, coupled with a low saturation voltage, make this an excellent choice for industrial/consumer applications where operational efficiency and small size are top priority. MARKING CODE: C64 SOT-563 CASE FEATURES: APPLICATIONS: High current (500mA Max) Motor drivers High DC current gain (15K Min) Relay drivers Low saturation voltage (V = 0.8V Max) CE(SAT) Pre-amplifier input applications High input impedance Voltage regulator controls SOT-563 surface mount package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CES Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 12 V EBO Continuous Collector Current I 500 mA C Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (Note 1) 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=30V 100 nA CBO CB I V=25V 100 nA CEO CE I V=10V 100 nA EBO EB BV I=100A 60 V CBO C BV I=100A 60 V CES C BV I=10mA 40 V CEO C Enhanced Specification 2 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R3 (29-June 2015)CMLT6427E ENHANCED SPECIFICATION SURFACE MOUNT SILICON NPN DARLINGTON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BV I=10A 14 V EBO E V I =50mA, I =0.5mA 0.80 V CE(SAT) C B V I =100mA, I=0.1mA 0.85 V CE(SAT) C B V I =500mA, I =0.5mA 1.0 V CE(SAT) C B V I =500mA, I =0.5mA 2.00 V BE(SAT) C B V V =5.0V, I=50mA 1.75 V BE(ON) CE C h V =5.0V, I=10mA 15K 100K FE CE C h V =5.0V, I=100mA 25K 200K FE CE C h V =5.0V, I=500mA 15K 140K FE CE C f V =5.0V, I =10mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 7.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 15 pF ib BE C NF V =5.0V, I =1.0mA, R =100k, CE C S f=1.0kHz TO 15.7kHz 10 dB Enhanced Specification SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Collector 3) Base 4) Emitter 5) Collector 6) Collector MARKING CODE: C64 R3 (29-June 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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