NTE48 Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CES CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown V I = 1mA, I = 0, Note 1 50 V (BR)CES C B Voltage CollectorBase Breakdown Voltage V I = 1.0 A, I = 0 600 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 12 V (BR)EBO E C Collector Cutoff Voltage I V = 40V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 10V, I = 0 100 nA EBO BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 200mA, V = 5V 25,000 FE C CE I = 1000mA, V = 5V 4,000 40,000 C CE CollectorEmitter Saturation Voltage V I = 1000mA, I = 2mA 1.5 V CE(sat) C B BaseEmitter ON Voltage V I = 1000mA, V = 5V 2.0 V BE(on) C CE SmallSignal Characteristics Current GainBandwidth Product f I = 200mA, V = 5V, 100 1000 MHz T C CE f = 100MHz CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 10 pF cb CB E Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2% .339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 C (13.0) B Min E E B C .100 (2.54) .200 (5.08) Max .240 (6.09) Max