NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, P = 40W 512MHz O Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resis- tors to withstand infinite VSWR under operating conditions. Features: Designed for UHF Commercial Equipment 38W with Greater than 5.8dB Gain Withstands 20:1 VSWR Min., All Phase Angles Tuned Q Technology Diffused Emitter Resistors Absolute Maximum Ratings: (T = +25C unless othrwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A C Total Device Dissipation (At +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W thJC Electrical Characteristic: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static CollectorEmitter Breakdown Voltage V I = 50mA, I = 0, Note 1 16 V (BR)CEO C B V I = 15mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 5mA, i = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 12.5V, V = 0 5 mA CES CE BE DC Current Gain h V = 5V, I = 1A 20 FE CE C Note 1. Pulsed through 25mH indicator.Electrical Characteristic (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Output Power P V = 12.5V, f = 470MHz 38 40 W O CE Power Gain P V = 12.5V, f = 470MHz 5.8 dB G CE Impedance Z V = 12.5V, P = 10W, f = 470MHz 2 j1.3 s CE i Z 1.6 j1.8 cl Output Capacitance C V = 12.5V, I = 0, f = 1MHz 95 pF ob CB E .205 (5.18) .215 (5.48) .122 (3.1) Dia EB .405 (10.3) Min CE .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)
