NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, P = 18W 866MHz O Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase band- width and power gain over the complete range of 806866MHz. Features: Designed for 806866MHz Mobile Equipment 18W Min., with Greater than 6dB Gain at 836MHz Withstands 10:1 VSWR at Rated Operating Conditions Matched Input Technology Common Base Absolute Maximum Ratings: (T = +25C unless othrwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A C Total Device Dissipation (At +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46W tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8C/W thJC Electrical Characteristic: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static CollectorEmitter Breakdown Voltage V I = 50mA, I = 0, Note 1 16 V (BR)CEO C B V I = 50mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, i = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0 10 mA CES CE BE DC Current Gain h V = 6V, I = 1A 20 FE CE C Note 1. Pulsed through 25mH indicator.Electrical Characteristic (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Output Power P V = 12.5V, f = 836MHz 18 W O CE Power Gain P V = 12.5V, f = 836MHz 6 dB G CE Impedance Z V = 12.5V, P = 15W, f = 836MHz 3.0 j4.8 s CE i Z 1.6 j2.5 cl Output Capacitance C V = 12.5V, I = 0, f = 1MHz 20 pF ob CB E .725 (18.42) .325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia BC .960 (24.38) Max EB .225 (5.72) Max .380 (5.72) Dia Max .285 (7.25) Max .180 .730 (18.54) (4.57) Max .960 (24.38) Max