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Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25C unless otherwise noted Equivalent Circuit C C Symbol Parameter Value Units V Collector- Base Voltage : KSE800/801 60 V CBO : KSE802/803 80 V B V Collector-Emitter Voltage : KSE800/801 60 V CEO : KSE802/803 80 V V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C R1 R2 I Base Current 0.1 A B P Collector Dissipation (T =25C) 40 W E R11 0k C C R20 .6k T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage CEO : KSE800/801 I = 50mA, I = 0 60 V C B : KSE802/803 80 V I Collector Cut-off Current CEO : KSE800/801 V = 60V, I = 0 100 A CE B : KSE802/803 V = 80V, I = 0 100 A CE B I Collector Cut-off Current V = Rated BV , I = 0 100 A CBO CB CEO E V = Rated BV , I = 0 500 A CB CEO E T = 100C C I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO BE C h DC Current Gain : KSE800/802 V = 3V, I = 1.5A 750 FE CE C : KSE801/803 V = 3V, I = 2A 750 CE C : ALL DEVICES V = 3V, I = 4A 100 CE C V (sat) Collector-Emitter Saturation Voltage CE : KSE800/802 I = 1.5A, I = 30mA 2.5 V C B : KSE801/803 I = 2A, I = 40mA 2.8 V C B : ALL DEVICES I = 4A, I = 40mA 3 V C B V (on) Base-Emitter ON Voltage BE : KSE800/802 V = 3V, I = 1.5A 2.5 V CE C : KSE801/803 V = 3V, I = 2A 2.5 V CE C : ALL DEVICES V = 3V, I = 4A 3 V CE C 2001 Fairchild Semiconductor Corporation Rev. A3, June 2001