2N5306 2N5308 www.centralsemi.com SILICON DESCRIPTION: NPN DARLINGTON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5306 and 2N5308 are silicon NPN epitaxial planar Darlington transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N5306 2N5308 UNITS A Collector-Base Voltage V 25 40 V CBO Collector-Emitter Voltage V 25 40 V CEO Emitter-Base Voltage V 12 V EBO Continuous Collector Current I 300 mA C Peak Collector Current I 500 mA CM Continuous Base Current I 100 mA B Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =Rated V 100 nA CBO CB CBO I V =Rated V , T=100C 20 A CBO CB CBO A I V=12V 100 nA EBO EB BV I =10A (2N5306) 25 V CBO C BV I =10A (2N5308) 40 V CBO C BV I =10mA (2N5306) 25 V CEO C BV I =10mA (2N5308) 40 V CEO C BV I=10A 12 V EBO E V I =200mA, I=200A 1.4 V CE(SAT) C B V I =200mA, I=200A 1.6 V BE(SAT) C B V V =5.0V, I=200mA 1.5 V BE(ON) CE C h V =5.0V, I=2.0mA 7.0K 70K FE CE C h V =5.0V, I=100mA 20K FE CE C h V =5.0V, I =2.0mA, f=1.0kHz 7.0K fe CE C h V =5.0V, I =2.0mA, f=10MHz 15.6 dB fe CE C h V =5.0V, I =2.0mA, f=1.0kHz 650 kW ie CE C f V =5.0V, I =2.0mA, f=10MHz 60 MHz T CE C C V =10V, f=1.0MHz 10 pF cb CB C V =0.5V, f=1.0MHz 12 pF eb EB R2 (13-January 2016)2N5306 2N5308 SILICON NPN DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R2 (13-January 2016) www.centralsemi.com