KSH122 / KSH122I NPN Silicon Darlington Transistor November 2013 KSH122 / KSH122I NPN Silicon Darlington Transistor Description Features Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications. High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP122 Complement to KSH127 Applications Switching Regulators Converters Power Amplifiers Equivalent Circuit C B 11D-PAK I-PAK R1 R2 1.Base 2.Collector 3.Emitter E Ordering Information Part Number Top Mark Package Packing Method KSH122TF KSH122 TO-252 3L (DPAK) Tape and Reel KSH122TM KSH122 TO-252 3L (DPAK) Tape and Reel KSH122ITU KSH122-I TO-251 3L (IPAK) Rail 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSH122 / KSH122I Rev. 1.1.0 1 KSH122 / KSH122I NPN Silicon Darlington Transistor Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 8 A C I Collector Current (Pulse) 16 A CP I Base Current 120 mA B Collector Dissipation (T =25C) 20.00 C P W C Collector Dissipation (T =25C) 1.75 A T Junction Temperature 150 C J T Storage Temperature - 65 to 150 C STG Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Typ. Max. Unit Collector-Emitter Sustaining V (sus) I = 30 mA, I = 0 100 V CEO (1) C B Voltage I Collector Cut-Off Current V = 50 V, I =0 10 A CEO CE B I Collector Cut-Off Current V = 100 V, I = 0 10 A CBO CB E I Emitter Cut-Off Current V = 5 V, I = 0 2 mA EBO EB C V = 4 V, I = 4 A 1000 12000 CE C (1) h DC Current Gain FE V = 4 V, V = 8 A 100 CE EB I = 4 A, I = 16 mA 2 Collector-Emitter Saturation C B V (sat) V CE (1) Voltage I = 8 A, I = 80 mA 4 C B (1) V (sat) Base-Emitter Saturation Voltage I = 8 A, I = 80 mA 4.5 V BE C B (1) V (on) Base-Emitter On Voltage V = 4 V, I = 4 A 2.8 V BE CE C C Output Capacitance V = 10 V, I = 0, f = 0.1 MHz 200 pF ob CB E Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSH122 / KSH122I Rev. 1.1.0 2