NTE485 Silicon NPN Transistor RF Power Output for Mobile Use, P = 25W 866MHz O Description: The NTE485 is an NPN Silicon Epitaxial Planar Transistor that was designed for amplifier applications in the 806 866MHz frequency range. Internal input matching and Common Base Configuration as- sure optimum gain and efficiency across the entire frequency band. Features: Designed for 800 MHz Mobile Communications Equipment 25W Min., with Greater than 5.5dB Gain Withstands Infinite VSWR at Rated Operating Conditions Internal Input matched Tuned Q Common Base Configuration Absolute Maximum Ratings: Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A C Total Device Dissipation (At +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 C/W thJC Electrical Characteristic: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 50mA, I = 0, Note 1 18 V (BR)CEO C B V I = 50mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 5 mA CEO CB E DC Current Gain h V = 5V, I = 1A 15 FE CE C Note 1. Pulsed through 25mH indicator.Electrical Characteristic (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit RF Characteristics: Small Signal Output Capacitance C V = 12.5V, I = 0 75.0 pF ob cb C RF Characteristics: Large Signal Output Power P V = 12.5V, f = 836MHz 25 W O CE Power Gain P V = 12.5V, f = 836MHz 5.5 dB G CE Impedance Z V = 12.5V, P = 25W, f = 836MHz 3.6 j4.0 s CE O Z 2.0 j0.4 cl .120 (3.04) .100 (2.54) BC B .230 (5.84) B E B .124 (3.15) Dia .494 .068 (1.72) (12.55) .723 (18.37) .124 (3.15) .976 (24.8) .270 (6.85) .045 (1.14) .360 (9.14)