722863X STMicroelectronics

TIP142T TIP147T Complementary power Darlington transistors Features Monolithic Darlington configuration TAB Integrated antiparallel collector-emitter diode Application 3 Linear and switching industrial equipment 2 1 Description TO-220 The devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting Figure 1. Internal schematic diagrams transistors show exceptional high gain performance coupled with very low saturation voltage. R typ. = 5 k R typ. = 8 k 1 1 R typ. = 60 R typ. = 100 2 2 Table 1. Device summary Part number Marking Polarity Package Packaging TIP142T TIP142T NPN TO-220 Tube TIP147T TIP147T PNP May 2010 Doc ID 4135 Rev 5 1/8 www.st.com 8Absolute maximum ratings TIP142T, TIP147T 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM I Base current 0.5 A B P Total dissipation at T = 25 C 90 W TOT case T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Note: For PNP type voltage and current are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case __max 1.4 C/W thJC 2/8 Doc ID 4135 Rev 5