MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoCase R 8.33 C/W JC Thermal Resistance JunctiontoAmbient (Note 2) R 80 C/W JA Lead Temperature for Soldering Purpose T 260 C L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B MJD47, NJVMJD47T4G 250 MJD50, NJVMJD50T4G 400 Collector Cutoff Current I mAdc CEO (V = 150 Vdc, I = 0) CE B MJD47, NJVMJD47T4G 0.2 (V = 300 Vdc, I = 0) CE B MJD50, NJVMJD50T4G 0.2 Collector Cutoff Current I mAdc CES (V = 350 Vdc, V = 0) CE BE MJD47, NJVMJD47T4G 0.1 (V = 500 Vdc, V = 0) CE BE MJD50, NJVMJD50T4G 0.1 Emitter Cutoff Current I mAdc EBO (V = 5 Vdc, I = 0) 1 BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.3 Adc, V = 10 Vdc) C CE 30 150 (I = 1 Adc, V = 10 Vdc) C CE 10 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1 Adc, I = 0.2 Adc) 1 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1 Adc, V = 10 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 0.2 Adc, V = 10 Vdc, f = 2 MHz) 10 C CE SmallSignal Current Gain h fe (I = 0.2 Adc, V = 10 Vdc, f = 1 kHz) 25 C CE 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.