TIP29 / TIP29A / TIP29C NPN Epitaxial Silicon Transistor November 2014 TIP29 / TIP29A / TIP29C NPN Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complementary to TIP30 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP29 TIP29 TO-220 3L (Single Gauge) Bulk TIP29A TIP29A TO-220 3L (Single Gauge) Bulk TIP29C TIP29C TO-220 3L (Single Gauge) Bulk TIP29CTU TIP29C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP29 40 V Collector-Base Voltage TIP29A 60 V CBO TIP29C 100 TIP29 40 V Collector-Emitter Voltage TIP29A 60 V CEO TIP29C 100 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 3 A CP I Base Current 0.4 A B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP29 / TIP29A / TIP29C Rev. 1.1.0 TIP29 / TIP29A / TIP29C NPN Epitaxial Silicon Transistor Thermal Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit Collector Dissipation (T = 25C) 2 A P W C Collector Dissipation (T = 25C) 30 C Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Max. Unit TIP29 40 Collector-Emitter Sustaining V (sus) TIP29A I = 30 mA, I = 0 60 V (1) CEO C B Voltage TIP29C 100 TIP29 / V = 30 V, I =00.3 CE B TIP29A I Collector Cut-Off Current mA CEO TIP29C V = 60 V, I =00.3 CE B TIP29 V = 40 V, V = 0 200 CE EB I Collector Cut-Off Current TIP29A V = 60 V, V = 0 200 A CES CE EB TIP29C V = 100 V, V = 0 200 CE EB I Emitter Cut-Off Current V = 5 V, I = 0 1.0 mA EBO EB C V = 4 V, I = 0.2 A 40 CE C (1) h DC Current Gain FE V = 4 V, I = 1 A 15 75 CE C (1) V (sat) Collector-Emitter Saturation Voltage I = 1 A, I = 125 mA 0.7 V CE C B (1) V (on) Base-Emitter On Voltage V = 4 V, I = 1 A 1.3 V BE CE C f Current Gain Bandwidth Product V = 10 V, I = 200 mA 3.0 MHz T CE C Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP29 / TIP29A / TIP29C Rev. 1.1.0 2