Ordering number : EN2158B 2SD1835 Bipolar Transistor 2SD1835 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =50V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I =0A 100 nA EBO EB C h1V =2V, I =100mA 100* 560* FE CE C DC Current Gain h2V =2V, I =1.5A 40 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 150 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 12 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =1A, I =50mA 0.15 0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =1A, I =50mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 6 V (BR)EBO E C Turn-ON Time t 60 ns on Storage Time t See speci ed Test Circuit. 550 ns stg Fall Time t 30 ns f * : The 2SD1835 is classi ed by 100mA h as follows : FE Rank R S T U h 100 to 200 140 to 280 200 to 400 280 to 560 FE Switching Time Test Circuit I B1 OUTPUT I B2 INPUT R V B R R L 50 + + 100 F 470 F V = --5V V BE CC I =10I = --10I =500mA, V =25V C B1 B2 CC Ordering Information Device Package Shipping memo 2SD1835S NP 500pcs./bag 2SD1835T NP 500pcs./bag Pb Free 2SD1835S-AA NP 1,500pcs./box 2SD1835T-AA NP 1,500pcs./box I -- V I -- V C CE C CE 2.4 1200 1000 2.0 800 1.6 600 1.2 400 0.8 0.4 200 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 042861102 Collector-to-Emitter Voltage, V -- V ITR09361 Collector-to-Emitter Voltage, V -- V ITR09363 CE CE No.2158-2/7 I =0mA I =0mA B B 2mA 1mA 2mA 4mA 3mA 4mA 7mA 6mA 5mA 8mA 15mA 25mA 40mA 50mA Collector Current, I -- A C Collector Current, I -- mA C