2STBN15D100 STMicroelectronics

2STBN15D100 Low voltage NPN power Darlington transistor Features Good h linearity FE High f frequency T TAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 3 Application 1 Linear and switching industrial equipment DPAK Description The device is manufactured in planar technology with base island layout and monolithic Figure 1. Internal schematic diagrams Darlington configuration. R = 8 k 1 R = 150 2 Table 1. Device summary Order code Marking Package Packaging 2STBN15D100T4 BN15D100 DPAK Tape and reel January 2010 Doc ID 16117 Rev 2 1/7 www.st.com 7 Electrical ratings 2STBN15D100 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 12 A C I Collector peak current 15 A CM I Base current 0.2 A B P Total dissipation at T = 25 C 70 W TOT case T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 1.8 C/W thJC 2/7 Doc ID 16117 Rev 2