X-On Electronics has gained recognition as a prominent supplier of 2STC4468 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2STC4468 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2STC4468 STMicroelectronics

Name: 2STC4468
Brand: STMicroelectronics
SKU: 2STC4468_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

2STC4468 electronic component of STMicroelectronics

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See Product Specifications

Part No.	2STC4468
Manufacturer:	STMicroelectronics
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT High Pwr NPN BiPolar Trans
Datasheet:	2STC4468 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.5446 ea
Line Total: USD 2.54

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

2STC4468 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 01 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 2.5446 10 : USD 1.7763 100 : USD 1.4591 500 : USD 1.1819 1000 : USD 1.0065 5000 : USD 0.9379

0 Ship by Wed. 01 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 2.379 10 : USD 2.2997 50 : USD 2.0278 250 : USD 1.6087 500 : USD 1.518 750 : USD 1.5067

Specifications

Manufacturer STMicroelectronics STMicroelectronics
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Package / Case TO - 3P TO - 3P
Transistor Polarity NPN NPN
Packaging Tube Tube
Brand Stmicroelectronics Stmicroelectronics
Collector Emitter Voltage Vbrceo 140 V 140 V
Transition Frequency Ft 20 MHz 20 MHz
Power Dissipation Pd 100 W 100 W
Dc Collector Current 7 A 7 A
Dc Current Gain Hfe 70hFE 70hFE
Transistor Case Style TO - 3P TO - 3P
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Svhc No SVHC (17 - Dec - 2015) No SVHC (17 - Dec - 2015)
Collector Emitter Saturation Voltage Vceon 500 mV 500 mV
Continuous Collector Current Ic Max 10 A 10 A
Current Ic Continuous A Max 7 A 7 A
Current Ic Hfe 3 mA 3 mA
Gain Bandwidth Ft Typ 20Mhz 20Mhz
Hfe Min 70 70
Power Dissipation Ptot Max 100 W 100 W
Termination Type Through Hole Through Hole
Voltage Vcbo 200 V 200 V

We are delighted to provide the 2STC4468 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2STC4468 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2STC4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V = 140 V CEO Complementary to 2STA1695 Typical f = 20 MHz t Fully characterized at 125 C 3 2 Application 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram This device is an NPN transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages. Table 1. Device summary Order code Marking Package Packaging 2STC4468 2STC4468 TO-3P Tube February 2012 Doc ID 13600 Rev 3 1/10 www.st.com 10Electrical ratings 2STC4468 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 200 V CBO E V Collector-emitter voltage (I = 0) 140 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 10 A C I Collector peak current (t < 5 ms) 20 A CM P P Total dissipation at T = 25 C 100 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.25 C/W thj-case R Thermal resistance junction-ambient max 35.7 C/W thj-amb 2/10 Doc ID 13600 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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