Product Information

BAT43

BAT43 electronic component of STMicroelectronics

Datasheet
Diode: Schottky rectifying; THT; 30V; 0.2A; DO35; Ufmax:0.45V

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0745 ea
Line Total: USD 0.07

448 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
448 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BAT43
STMicroelectronics

1 : USD 0.0775
10 : USD 0.0759
100 : USD 0.0759
1000 : USD 0.0759

1 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BAT43
STMicroelectronics

1 : USD 0.105
10 : USD 0.0983
100 : USD 0.0963
1000 : USD 0.0963
24000 : USD 0.0963

     
Manufacturer
Product Category
Brand
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No. Of Pins
Product Range
Svhc
Alternate Case Style
Current If @ Vf
Current Ifsm
Device Marking
Diode Type
External Diameter
External Length / Height
Forward Voltage
Junction Temperature Tj Max
Operating Temperature Min
Operating Temperature Range
Reverse Recovery Time Trr Max
Semiconductor Technology
Kind Of Package
LoadingGif

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BAT42 BAT43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. DO-35 These devices have integrated protection against excessive voltage such as electrostatic dis- ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 30 V RRM I Forward Continuous Current T = 25C 200 mA F a I Repetitive Peak Fordware Current t 1s 500 mA FRM p 0.5 I Surge non Repetitive Forward Current* t = 10ms 4 A FSM p P Power Dissipation* T = 65 C 200 mW tot l T Storage and Junction Temperature Range - 65 to +150 C stg T - 65 to +125 C j Maximum Temperature for Soldering during 10s at 4mm from T L 230 C Case THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-ambient* 300 C/W th(j-a) * On infinite heatsink with 4mm lead length October 2001 - Ed: 1C 1/4BAT42 / BAT43 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V BR Tj = 25C I = 100A 30 V R V * I = 200mA F T = 25C F All Types 1 V j I = 10mA T = 25C F BAT 42 0.4 j I = 50mA 0.65 T = 25C F j I = 2mA BAT 43 0.26 0.33 T = 25C F j I = 15mA 0.45 T = 25C F j I * T = 25C V = 25V 0.5 A R j R T = 100C 100 j DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit CT = 25C V = 1V f = 1MHz 7 pF j R Tj = 25CI = 10mA I = 10mA i = 1mA F R rr trr 5ns R = 100 L h T = 25C R = 15K C = 300pF f = 45MHz V = 2V 80 % j L L i * Pulse test: t 300s < 2%. p Fig. 1: Forward current versus forward voltage at Fig. 2: Forward current versus forward voltage different temperatures (typical values). (typical values). 2/4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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