2STF1525 STMicroelectronics

2STF1525 Low voltage high performance NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic 4 Fast switching speed 3 2 1 Applications Emergency lighting SOT-89 LED drive Motherboard and hard disk drive Mobile equipment DC-DC converter, voltage regulation Figure 1. Internal schematic diagram Description The device is a NPN transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Order codes Marking Package Packaging 2STF1525 1525 SOT-89 Tape and reel November 2009 Doc ID 15794 Rev 2 1/7 www.st.com 7 Obsolete Product(s) - Obsolete Product(s) Electrical ratings 2STF1525 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = - 1.5 V) 95 V CEX BE V Collector-emitter voltage (I = 0) 25 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 5 A C I Collector peak current (t < 5 ms) 10 A CM P I Base current 1 A B P Total dissipation at T = 25 C 1.4 W TOT amb T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient max 89 C/W thJA 2 1. Device mounted on PCB area of 1 cm 2/7 Doc ID 15794 Rev 2 Obsolete Product(s) - Obsolete Product(s)