2STC4467 STMicroelectronics

2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V = 120 V CEO Complementary to 2STA1694 Fast-switching speed Typical f = 20 MHz t o Fully characterized at 125 C 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 Obsolete Product(s) - Obsolete Product(s)Electrical ratings 2STC4467 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 120 V CBO E V Collector-emitter voltage (I = 0) 120 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 8 A C I Collector peak current (t < 5 ms) 16 A CM P P Total dissipation at T = 25 C 80 W TOT c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.563 C/W thj-case 2/8 Obsolete Product(s) - Obsolete Product(s)