2STC5242 STMicroelectronics

2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V = 230 V CEO Complementary to 2STA1962 Fast-switching speed Typical f = 30 MHz T Application 3 2 1 Audio power amplifier TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor Figure 1. Internal schematic diagram shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC5242 2STC5242 TO-3P Tube July 2008 Rev 3 1/9 www.st.com 9Electrical ratings 2STC5242 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 230 V CBO E V Collector-emitter voltage (I = 0) 230 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 15 A C I Collector peak current 30 A CM P Total dissipation at T = 25C 150 W tot C T Storage temperature -55 to 150 C stg T Operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 0.83 C/W thJ-case 2/9