2STD1665T4 STMicroelectronics

2STD1665 Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage TAB High current gain characteristic Fast-switching speed 3 Applications 1 Voltage regulators DPAK High efficiency low voltage switching applications Description Figure 1. Internal schematic diagram The device is a low voltage NPN transistor with (TAB) C exceptional high gain performance coupled with very low saturation voltage. It is designed in planar technology withbase islan layout. (1) B (3) E Table 1. Device summary Order code Marking Packages Packaging 2STD1665T4 D1665 DPAK Tape and reel February 2011 Doc ID 12350 Rev 3 1/10 www.st.com 10Electrical ratings 2STD1665 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 150 V CBO E V Collector-emitter voltage (I = 0) 65 V CEO B V Emitter-base voltage (I = 0) 7 V EBO C I Collector current 6 A C I Collector peak current (t < 5ms) 20 A CM P I Base current 1 A B P Total dissipation at T = 25 C 15 W tot a T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient max 8.33 C/W thj-a 2 1. Device mounted on a PCB area of 1 cm 2/10 Doc ID 12350 Rev 3