MMSTA13/MMSTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Type Available Dim Min Max (MMSTA63/MMSTA64) C A 0.25 0.40 Ideal for Low Power Amplification and Switching B 1.15 1.35 High Current Gain B C C 2.00 2.20 Ultra-Small Surface Mount Package D 0.65 Nominal Lead Free/RoHS Compliant (Note 2) BE E 0.30 0.40 Gree Device (Note 3 and 4) G G 1.20 1.40 H H 1.80 2.20 Mechanical Data K M J 0.0 0.10 Case: SOT-323 K 0.90 1.00 Case Material: Molded Plastic,Gree Molding J L 0.25 0.40 D E L Compound, Note 4. UL Flammability Classification M 0.10 0.18 Rating 94V-0 0 8 Moisture Sensitivity: Level 1 per J-STD-020C All Dimensions in mm Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 C Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMSTA13 Marking K2D, K3D, See Page 3 MMSTA14 Marking K3D, See Page 3 Ordering & Date Code Information: See Page 3 B E Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 10 V EBO Collector Current - Continuous (Note 1) I 300 mA C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Emitter Breakdown Voltage V 30 V I = 100A V = 0V (BR)CEO C BE Collector Cutoff Current 100 nA I V = 30V, I = 0 CBO CB E Emitter Cutoff Current 100 nA I V = 10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) I = 10mA, V = 5.0V C CE DC Current Gain MMSTA13 5,000 MMSTA14 10,000 I = 10mA, V = 5.0V C CE h FE MMSTA13 10,000 I = 100mA, V = 5.0V C CE MMSTA14 20,000 I = 100mA, V = 5.0V C CE Collector-Emitter Saturation Voltage V 1.5 V I = 100mA, I = 100A CE(SAT) C B Base-Emitter Saturation Voltage V 2.0 V I = 100mA, V = 5.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.0 Typical pF V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 15 Typical pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C V = 5.0V, I = 10mA, CE C Current Gain-Bandwidth Product f 125 MHz T f = 100MHz Note: 5. Short duration pulse test used to minimize self-heating effect. 200 1.10 I 1.05 C = 1000 I B 1.00 T = -50C 0.95 A 150 0.90 0.85 0.80 T = 25C 100 A 0.75 0.70 0.65 0.60 T = 150C 50 A 0.55 0.50 0.45 0 0.40 0 175 200 1,000 25 50 75 100 125 150 1 10 100 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current Fig. 1, Max Power Dissipation vs. Ambient Temperature 1,000,000 1.6 1.5 V = 5V CE T = -50C A 1.4 1.3 100,000 1.2 T = 25C A 1.1 1.0 0.9 10,000 0.8 T = 150C A 0.7 0.6 1,000 0.5 0.4 0.3 100 0.2 100 0.1 1 10 10 1,000 1 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Base Emitter Voltage vs. Collector Current Fig. 3, DC Current Gain vs. Collector Current MMSTA13/MMSTA14 DS30165 Rev. 9 - 2 2 of 3 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN FE P , POWER DISSIPATION (mW) D V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) V , BASE EMITTER VOLTAGE (V) BE(ON)