X-On Electronics has gained recognition as a prominent supplier of 2N7053 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N7053 Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N7053 ON Semiconductor

2N7053 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.2N7053
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors NPN Transistor Darlington
Datasheet: 2N7053 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.1369 ea
Line Total: USD 205.35 
Availability - 0
MOQ: 1500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 1500
Multiples : 1
1500 : USD 0.1369
1500 : USD 0.1369
4500 : USD 0.1263
9000 : USD 0.1263
28500 : USD 0.1053
55500 : USD 0.1053

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7053 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7053 and other electronic components in the Darlington Transistors category and beyond.

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2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C TO-92 C B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 100 V CEO V Collector-Base Voltage 100 V CBO V Emitter-Base Voltage 12 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N7052 2N7053 *NZT7053 P Total Device Dissipation 625 1,000 1,000 mW D 5.0 8.0 8.0 Derate above 25C mW/C R Thermal Resistance, Junction to Case 83.3 125 C/W JC Thermal Resistance, Junction to Ambient 200 50 125 R C/W JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm mounting pad for the collector lead min. 6 cm . 1997 Fairchild Semiconductor Corporation2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 100 V (BR)CEO C B V Collector-Base Breakdown Voltage 100 V I = 100 A, I = 0 (BR)CBO C E V Emitter-Base Breakdown Voltage I = 1.0 mA, I = 0 12 V (BR)EBO E C I Collector-Cutoff Current V = 80 V, I = 0 0.1 A CBO CB E I Collector-Cutoff Current V = 80 V, I = 0 0.2 A CES CE E I Emitter-Cutoff Current V = 7.0 V, I = 0 0.1 A EBO EB C ON CHARACTERISTICS* h DC Current Gain I = 100 mA, V = 5.0 V 10,000 FE C CE I = 1.0 A, V = 5.0 V 1,000 20,000 C CE Collector-Emitter Saturation Voltage I = 100 mA, I = 0.1 mA 1.5 V V C B CE(sat) V Base-Emitter On Voltage I = 100 mA, V = 5.0 V 2.0 V C BE BE(on) SMALL SIGNAL CHARACTERISTICS F Transition Frequency I = 100 mA, V = 5.0 V, 200 MHz C CE T Collector-Base Capacitance V = 10 V,f = 1.0 MHz 10 pF C 2N7052 cb CB 2N7053 8.0 *Pulse Test: Pulse Width 300 ms, Duty Cycle 1.0% Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 100 2 = 1000 80 1.6 60 1.2 125 C - 40C 40 0.8 25 C 25 C 125 C 20 - 40C 0.4 0 0 0.001 0.01 0.1 1 10 100 1000 I - COLLECTOR CURRENT (A) I - COLLECTOR CURRENT (mA) C C P06 FE CESAT h - TYPICAL PULSED CURRENT GAIN (K) V - COLLECTOR EMITTER VOLTAGE (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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