X-On Electronics has gained recognition as a prominent supplier of 2SA1416S-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1416S-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1416S-TD-E ON Semiconductor

2SA1416S-TD-E electronic component of ON Semiconductor
2SA1416S-TD-E ON Semiconductor
2SA1416S-TD-E Bipolar Transistors - BJT
2SA1416S-TD-E  Semiconductors

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See Product Specifications
Part No. 2SA1416S-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT BIP PNP 1A 100V
Datasheet: 2SA1416S-TD-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5489 ea
Line Total: USD 0.55 
Availability - 2781
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3487
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 192
Multiples : 1
192 : USD 0.3378
217 : USD 0.2998
219 : USD 0.2968
250 : USD 0.2603
252 : USD 0.2577
500 : USD 0.2395
1000 : USD 0.2277
3000 : USD 0.2159

506
Ship by Mon. 03 Feb to Thu. 06 Feb
MOQ : 1
Multiples : 1
1 : USD 0.358
10 : USD 0.2913
30 : USD 0.2633
100 : USD 0.2272
500 : USD 0.2111
1000 : USD 0.2018

2781
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5489
10 : USD 0.374
100 : USD 0.2717
500 : USD 0.2266
1000 : USD 0.2079
2000 : USD 0.1771
10000 : USD 0.1771
25000 : USD 0.1716
50000 : USD 0.1694

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1416S-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1416S-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor 2SA1416 / 2SC3646 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)100V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C DC Current Gain h V =(--)5V, I =(--)100mA 100* 400* FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)100mA 120 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (13)8.5 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)400mA, I =(--)40mA (--0.2)0.1 (--0.6)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)400mA, I =(--)40mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)120 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)100 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-ON Time t (80)80 ns on Storage Time t See speci ed Test Circuit. (700)850 ns stg Fall Time t (40)50 ns f * : The 2SA1416 / 2SC3646 are classi ed by 100mA h as follows : FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 INPUT R B R L V R 50 + + 100F 470F --5V 50V I =10I =--10I =400mA C B1 B2 (For PNP, the polarity is reversed) Ordering Information Device Package Shipping memo 2SA1416S-TD-E PCP 1,000pcs./reel 2SA1416T-TD-E PCP 1,000pcs./reel Pb Free 2SC3646S-TD-E PCP 1,000pcs./reel 2SC3646T-TD-E PCP 1,000pcs./reel No.2005-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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