X-On Electronics has gained recognition as a prominent supplier of 2SD1164-AZ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1164-AZ Bipolar Transistors - BJT are a product manufactured by Renesas. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1164-AZ Renesas

2SD1164-AZ electronic component of Renesas
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Part No.2SD1164-AZ
Manufacturer: Renesas
Category: Bipolar Transistors - BJT
Description: Trans Darlington NPN 60V 2A 3-Pin(2+Tab) TO-252
Datasheet: 2SD1164-AZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
200: USD 0.497 ea
Line Total: USD 99.4 
Availability - 0
MOQ: 200  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 200
Multiples : 1
200 : USD 0.497

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Collector-Emitter Saturation Voltage
Brand
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain
Operating Temperature Classification
Base-Emitter Saturation Voltage Max
Rad Hardened
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We are delighted to provide the 2SD1164-AZ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1164-AZ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Preliminary Data Sheet R07DS0254EJ0400 2SD1164-Z Rev.4.00 Feb 24, 2011 SILICON POWER TRANSISTOR DESCRIPTION The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES High hFE = 2 000 to 30 000 <R> ABSOLUTE MAXIMUM RATINGS (TA = 25C) CHARACTERISTICS SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 60 V Base to Emitter Voltage VEBO 8.0 V Collector Current (DC) IC(DC) 2 A Note 1 Collector Current (pulse) IC(pulse) 4 A Note 2 Total Power Dissipation (TA = 25C) PT 2.0 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Notes 1. PW 10 ms, Duty Cycle 50% 2 2. When mounted on ceramic substrate of 7.5 cm 0.7 mm The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R07DS0254EJ0400 Rev.4.00 Page 1 of 4 Feb 24, 2011 2SD1164-Z Chapter Title R07DS0254EJ0400 Rev.4.00 Page 2 of 4 Feb 24, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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