Product Information

2SD1164-AZ

2SD1164-AZ electronic component of Renesas

Datasheet
Trans Darlington NPN 60V 2A 3-Pin(2+Tab) TO-252
Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

200: USD 0.5128 ea
Line Total: USD 102.56

0 - Global Stock
MOQ: 200  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 200
Multiples : 1

Stock Image

2SD1164-AZ
Renesas

200 : USD 0.5128

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Collector-Emitter Saturation Voltage
Brand
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain
Operating Temperature Classification
Base-Emitter Saturation Voltage Max
Rad Hardened
LoadingGif

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Additional Infomation About Product

Preliminary Data Sheet R07DS0254EJ0400 2SD1164-Z Rev.4.00 Feb 24, 2011 SILICON POWER TRANSISTOR DESCRIPTION The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES High hFE = 2 000 to 30 000 <R> ABSOLUTE MAXIMUM RATINGS (TA = 25C) CHARACTERISTICS SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 60 V Base to Emitter Voltage VEBO 8.0 V Collector Current (DC) IC(DC) 2 A Note 1 Collector Current (pulse) IC(pulse) 4 A Note 2 Total Power Dissipation (TA = 25C) PT 2.0 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Notes 1. PW 10 ms, Duty Cycle 50% 2 2. When mounted on ceramic substrate of 7.5 cm 0.7 mm The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R07DS0254EJ0400 Rev.4.00 Page 1 of 4 Feb 24, 2011 2SD1164-Z Chapter Title R07DS0254EJ0400 Rev.4.00 Page 2 of 4 Feb 24, 2011

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Renesas may also be referenced as

CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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